Characterization of Crystalline Structure and Morphology of Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; Thin Film Grown by MOCVD Technique

Kjapsna, Alvars; Dimitrocenko, Lauris; Tāle, I.; Trukhin, A.N.; Ignatāns, Reinis; Grants, R.

doi:10.4028/www.scientific.net/kem.721.253

Cited by 2 publications

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“…β-Ga 2 O 3 thin films have been grown by a variety of methods, such as pulsed laser deposition [ 10 , 11 ] and magnetron sputtering [ 12 ]; however, molecular beam epitaxy [ 13 , 14 ] and metalorganic chemical vapour deposition (MOCVD) [ 15 , 16 , 17 , 18 ] are the most promising methods for high deposition rates and high-quality device fabrication. MOCVD in particular has the advantage of high growth rates (up to 10 μm/h) with sub-nanometre surface roughness [ 16 ].…”

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confidence: 99%

The Effect of a Nucleation Layer on Morphology and Grain Size in MOCVD-Grown β-Ga2O3 Thin Films on C-Plane Sapphire

et al. 2022

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β-Ga2O3 thin films grown on widely available c-plane sapphire substrates typically exhibit structural defects due to significant lattice and thermal expansion mismatch, which hinder the use of such films in electronic devices. In this work, we studied the impact of a nucleation layer on MOCVD-grown β-Ga2O3 thin film structure and morphology on a c-plane sapphire substrate. The structure and morphology of the films were investigated by X-ray diffraction, atomic force microscopy, transmission and scanning electron microscopy, while the composition was confirmed by X-ray photoelectron spectroscopy and micro-Raman spectroscopy. It was observed that the use of a nucleation layer significantly increases the grain size in the films in comparison to the films without, particularly in the samples in which H2O was used alongside O2 as the oxygen source for the nucleation layer growth. Our study demonstrates that a nucleation layer can play a critical role in obtaining high quality β-Ga2O3 thin films on c-plane sapphire.

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