Characterization of crystallographic defects in homoepitaxial diamond films by synchrotron X-ray topography and cathodoluminescence

Umezawa, Hamao; Kato, Y.; Watanabe, Hideyuki; Omer, A. M. M.; Yamaguchi, Hiroshi; Shikata, Shinichi

doi:10.1016/j.diamond.2011.02.007

Cited by 44 publications

(23 citation statements)

References 22 publications

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“…Observing and quantifying dislocations in diamond remains relatively difficult. X‐ray topography and cathodoluminescence 13 allow direct observation of these defects but they require difficult sample preparation or heavy equipment. Birefringence is also an indirect method that allows observing the strain generated by dislocations but only in thick polished crystals 14.…”

Section: Introductionmentioning

confidence: 99%

Etch‐pit formation mechanism induced on HPHT and CVD diamond single crystals by H₂/O₂ plasma etching treatment

Naamoun

Tallaire

Silva

et al. 2012

Physica Status Solidi (a)

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H2/O2 plasma treatments offer advantages over other etching processes of diamond as a technique to prepare the substrate surface prior to chemical vapor deposition (CVD) diamond growth. It allows removing defects induced on the surface by polishing, thus leading to an improved morphology and limiting the stress within the grown crystal. Moreover, they present the advantage to be performed in situ just before the CVD diamond growth. In this work, H2/O2 plasma treatments were performed so that threading dislocations and other defects are etched preferentially, thus leaving typical etch‐pits. The defect densities in several high pressure high temperature (HPHT) and CVD diamond crystals were then quantified and compared; in particular defects originating from polishing could be distinguished from extended defects inside the crystal. Furthermore, the defect density was found to be of the order of 105/cm2 for HPHT crystals, which was approximately one order of magnitude lower than that measured in low cost commercial CVD monocrystals. The use of laser microscopy also allowed observing the morphology, size and depth of different etch‐pits of 〈001〉‐oriented and misoriented crystals and their evolution with etching time in order to get a better understanding of defect density and formation during CVD growth.

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Section: Introductionmentioning

confidence: 99%

Etch‐pit formation mechanism induced on HPHT and CVD diamond single crystals by H₂/O₂ plasma etching treatment

Naamoun

Tallaire

Silva

et al. 2012

Physica Status Solidi (a)

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“…The NV-based strain imaging technique introduced in this work reaches the optical diffraction limit and a high sensitivity of 10 −5 Hz 1 2 -(<10 MPa), which outperforms more traditional strain imaging techniques such as Raman imaging [12] that are limited to absolute sensitivities >10 MPa in addition to being orders of magnitude slower [27]. Through sectional imaging, this 3D imaging technique also offers an advantage over birefringence [28,29] or x-ray topography [30] strain imaging methods, which image whole-sample and near-surface strains, respectively. Although limited to diamond and other materials with optically accessible, strain-sensitive spin defects (e.g.…”

Section: Discussionmentioning

confidence: 92%

Wide-field strain imaging with preferentially aligned nitrogen-vacancy centers in polycrystalline diamond

Trusheim¹,

Englund²

2016

New J. Phys.

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We report on wide-field optically detected magnetic resonance imaging of nitrogen-vacancy centers (NVs) in type IIa polycrystalline diamond. These studies reveal a heterogeneous crystalline environment that produces a varied density of NV centers, including preferential orientation within some individual crystal grains, but preserves long spin coherence times. Using the native NVs as nanoscale sensors, we introduce a three-dimensional strain imaging technique with high sensitivity ( 10 5 < -Hz -1/2 ) and diffraction-limited resolution across a wide field of view.

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“…In the case of type-Ib diamond, screw dislocations are observed on the (111) surface by using an etch-pit figure [11,12]. Umezawa et al suggested that the possible dislocations in type-Ib diamond are edge dislocations and 60°dislocations [13]; these are threading dislocations. Type-IIa diamond too has threading dislocations [14].…”

Section: Introductionmentioning

confidence: 97%

X-ray topographic study of defect in p− diamond layer of Schottky barrier diode

Kato

Umezawa

Shikata

2015

Diamond and Related Materials

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Characterization of crystallographic defects in homoepitaxial diamond films by synchrotron X-ray topography and cathodoluminescence

Cited by 44 publications

References 22 publications

Etch‐pit formation mechanism induced on HPHT and CVD diamond single crystals by H₂/O₂ plasma etching treatment

Etch‐pit formation mechanism induced on HPHT and CVD diamond single crystals by H₂/O₂ plasma etching treatment

Wide-field strain imaging with preferentially aligned nitrogen-vacancy centers in polycrystalline diamond

X-ray topographic study of defect in p− diamond layer of Schottky barrier diode

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Characterization of crystallographic defects in homoepitaxial diamond films by synchrotron X-ray topography and cathodoluminescence

Cited by 44 publications

References 22 publications

Etch‐pit formation mechanism induced on HPHT and CVD diamond single crystals by H2/O2 plasma etching treatment

Etch‐pit formation mechanism induced on HPHT and CVD diamond single crystals by H2/O2 plasma etching treatment

Wide-field strain imaging with preferentially aligned nitrogen-vacancy centers in polycrystalline diamond

X-ray topographic study of defect in p− diamond layer of Schottky barrier diode

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Etch‐pit formation mechanism induced on HPHT and CVD diamond single crystals by H₂/O₂ plasma etching treatment

Etch‐pit formation mechanism induced on HPHT and CVD diamond single crystals by H₂/O₂ plasma etching treatment