2014 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP) 2014
DOI: 10.1109/dtip.2014.7056665
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Characterization of Cu-Sn SLID interconnects for harsh environment applications

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(2 citation statements)
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“…While maintaining a temperature of 150°C, the wafers were bonded using a bonding pressure of 20 MPa. For more information about the fabrication process refer to [20, 21].…”
Section: Methodology For Cu‐sn Interconnect Characterisationmentioning
confidence: 99%
See 1 more Smart Citation
“…While maintaining a temperature of 150°C, the wafers were bonded using a bonding pressure of 20 MPa. For more information about the fabrication process refer to [20, 21].…”
Section: Methodology For Cu‐sn Interconnect Characterisationmentioning
confidence: 99%
“…In this work, we integrate the advancements from our seminal studies into high temperature interconnects, [20], test vehicles bonded using the Cu‐Sn SLID system. In parallel, we also report how micro‐extrusion printing methods in which high‐viscosity ceramic pastes are dispensed through cylindrical fine nozzles (2–250 µm) using CNC‐controlled motion has enabled complex 3D geometries to be fabricated for high temperature electronic packaging applications.…”
Section: Introductionmentioning
confidence: 99%