Characterization of cubic boron nitride films grown by mass separated ion beam deposition

Hofsäss, H.; Ronning, C.; Griesmeier, U.; Gross, M.; Reinke, S.; Kuhr, M.; Zweck, J.; Fischer, R.

doi:10.1016/b978-0-444-82334-2.50033-2

Cited by 10 publications

(11 citation statements)

References 24 publications

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“…For example, Hofsäss et al 39 have shown that energies of about 500 eV were necessary in their direct mass-separated ion beam deposition system to obtain more than 80% sp 3 bonded c-BN phase. However, stabilization of high temperature phases can also be achieved by using higher ion fluxes and lower ion energies.…”

Section: Introductionmentioning

confidence: 98%

Influence of substrate bias voltage on the properties of CNx films prepared by reactive magnetron sputtering

Hajek

Rusnak

Vlček

et al. 1999

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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In the present work, we systematically study the effect of radio frequency induced negative substrate bias voltage, Ub, on the characteristics of CNx films fabricated by direct current (dc) magnetron sputtering of a graphite target in a nitrogen plasma. CNx films, typically 1–2 μm thick, were deposited onto Si(100) substrates at a temperature of 600 °C and at a pressure of 0.5 or 5 Pa. The films’ microstructure and composition were evaluated using elastic recoil detection analysis, Fourier transform infrared spectroscopy, Raman scattering, x-ray diffraction, and atomic force microscopy. The films were found to be amorphous and partially conductive. The nitrogen concentration in the films varied between 12 and 24 at. %. Increasing the |Ub| values from 300 to 700 V resulted in increasing the N/C ratio, while the hydrogen content in the bulk decreased from 5 to 1 at. %. The latter effect clearly demonstrates the sputter-cleaning process during the ion-assisted deposition. Increasing the |Ub| values also resulted in an increase in film density from 1.5 to 2.7 g/cm3, and in a decrease in surface roughness from 13 to 2 nm. This densification was accompanied by an increased hardness (from 2 to 23 GPa), and elastic recovery (from 35% to 74%), and by higher adhesion to the silicon substrate. |Ub| values higher than 700 V lead to the degradation of the films mechanical properties. Even at its low concentration, hydrogen was found to be directly related to the film quality. We suggest that the presence of hydrogen inhibits interconnection of graphite-like planes containing carbon and nitrogen, which may hamper formation of possible fulerene-like microstructure described in recent literature.

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Section: Introductionmentioning

confidence: 98%

Influence of substrate bias voltage on the properties of CNx films prepared by reactive magnetron sputtering

Hajek

Rusnak

Vlček

et al. 1999

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…[1][2][3][4][5][6][7] The layered structure is independent of processes such as ion-beam-assisted evaporation, 1 ionassisted pulsed laser deposition, 2 RF bias sputtering, 3 ion plating, 4 mass separated ion-beam deposition 5 and inductively coupled plasma enhanced chemical vapor deposition ͑ICP-CVD͒. 6 However, initial layer thickness varies from a few nm, 1,5 a few tens of nm ͑Refs.…”

Section: Introductionmentioning

confidence: 99%

Atomic-scale structure at the nucleation site of cubic boron nitride deposited from the vapor phase

et al. 1999

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Cross-sectional transmission electron microscopy, two-dimensional Fourier analysis, and electron energy loss spectroscopy were applied to sputter-deposited cubic boron nitride (cBN) films in order to investigate the structural evolution during cBN film growth, especially cBN nucleation on the initial sp 2 -bonded BN layer adjacent to the substrate. The difference in the bonding state of each layer and the existence of rhombohedral BN (rBN)-like structure in the turbostratic BN (tBN) layer at the cBN nucleation sites were clearly ascertained. In addition, strong correlations between rBN͕003͖ and cBN͕111͖, and between rBN͕101͖ and cBN͕111͖, similar to those predicted for pressure-induced direct diffusionless conversion of rBN to cBN, were also confirmed. ͓S0163-1829͑99͒14015-3͔

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“…These methods comprise high-pressure high-temperature (HPHT) procedures, physical vapor deposition (PVD) and CVD. Representative PVD techniques are, for example, ion beam-assisted deposition (IBAD), [1,2] massselected ion beam deposition (MSIBD), [3] laser ablation, [4,5] and magnetron sputtering.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Boron Nitride Films Using Electron–Cyclotron Resonance Microwave Plasma and an H₂–BF₃–N₂–Ar–He Gas System

Chan¹,

Zhang²,

Chan³

et al. 2003

Chemical Vapor Deposition

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Boron nitride (BN) films with high crystallinity and phase purity (>80 %) in the cubic phase were synthesized over large areas using fluorine chemistry and electron±cyclotron resonance (ECR) microwave plasma. Plasma-enhanced fluorine chemistry was provided by a complex H 2 ±BF 3 ±N 2 ±Ar±He gas mixture. Each component of the mixture was optimized in accordance with its function. Such a procedure allowed the preparation of thick cBN films at a bias voltage as low as ±30 V. Micrometerthick cBN films exhibiting columnar growth were obtained. However, ion bombardment was still indispensable for the cBN growth. The effects of deposition time and ion bombardment on the phase purity and crystallinity of the cBN films were investigated.

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Characterization of cubic boron nitride films grown by mass separated ion beam deposition

Cited by 10 publications

References 24 publications

Influence of substrate bias voltage on the properties of CNx films prepared by reactive magnetron sputtering

Influence of substrate bias voltage on the properties of CNx films prepared by reactive magnetron sputtering

Atomic-scale structure at the nucleation site of cubic boron nitride deposited from the vapor phase

Synthesis of Boron Nitride Films Using Electron–Cyclotron Resonance Microwave Plasma and an H₂–BF₃–N₂–Ar–He Gas System

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Characterization of cubic boron nitride films grown by mass separated ion beam deposition

Cited by 10 publications

References 24 publications

Influence of substrate bias voltage on the properties of CNx films prepared by reactive magnetron sputtering

Influence of substrate bias voltage on the properties of CNx films prepared by reactive magnetron sputtering

Atomic-scale structure at the nucleation site of cubic boron nitride deposited from the vapor phase

Synthesis of Boron Nitride Films Using Electron–Cyclotron Resonance Microwave Plasma and an H2–BF3–N2–Ar–He Gas System

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About

Synthesis of Boron Nitride Films Using Electron–Cyclotron Resonance Microwave Plasma and an H₂–BF₃–N₂–Ar–He Gas System