2000
DOI: 10.1016/s0040-6090(99)00780-4
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Characterization of CuGa x Se y /ZnO for superstrate solar cells

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Cited by 29 publications
(12 citation statements)
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“…11 Investigations of the interface between the ZnO buffer layer and CIGS revealed the presence of a thin layer of Ga 2 O 3 which acts as barrier against photocurrent transport. 10,12,13 However, Na-free superstrate solar cells with efficiencies of up to 11Á2% have been obtained, but a strong light-soaking treatment was necessary. 14 The fundamental reasons for light-soakinginduced improvements in cell efficiency are not yet investigated.…”
Section: Cigs Solar Cellsmentioning
confidence: 99%
“…11 Investigations of the interface between the ZnO buffer layer and CIGS revealed the presence of a thin layer of Ga 2 O 3 which acts as barrier against photocurrent transport. 10,12,13 However, Na-free superstrate solar cells with efficiencies of up to 11Á2% have been obtained, but a strong light-soaking treatment was necessary. 14 The fundamental reasons for light-soakinginduced improvements in cell efficiency are not yet investigated.…”
Section: Cigs Solar Cellsmentioning
confidence: 99%
“…Hence it is possible that a small fraction of copper has diffused from CuInSe 2 layer into oxygen deficient In 2 O 3 in the present case. Literature reports show evidence for copper diffusion and other interactions at the interface in CuInSe 2 /CdS [10] and CuGa xSe y /ZnO structures [9]. The composition of the CuInSe 2 film determined by the simulation is 24.5% copper, 26.5% indium and 49% selenium.…”
Section: Rbs Resultsmentioning
confidence: 87%
“…Various research groups have studied the interface of CuInSe 2 with the other active elements involved in solar cells in terms of the possible chemical reaction, diffusion and compositional variations using spectroscopic methods and electrical measurements. Auger electron spectroscopy [4,5], X-ray photoelectron spectroscopy [5,6], I-V characteristics [7,8], C-V characteristics [8] and TEM [6,9] are the commonly used techniques. Apart from these, angular dependence of X-ray fluorescence, X-ray absorption fine structure and grazing incidence X-ray measurements have also been used [10].…”
Section: Introductionmentioning
confidence: 99%
“…4) The production of optically transparent and low-resistivity (n-type and p-type) ZnO films by doping appropriate elements 5) will open up various electrical and optical applications. 6) The low-resistivity ZnO film will be used as a transparent contact window material, replacing the indium tin oxide (ITO) film currently used. 7) ZnO has been known to crystallize only in a wurtzite structure.…”
Section: Introductionmentioning
confidence: 99%