Characterization of CuI thin films prepared by different techniques

Sirimanne, Prasad Manjusr; Rusop, M.; Shirata, T.; Soga, Tetsuo; Jimbo, Takashi

doi:10.1016/s0254-0584(02)00547-3

Cited by 49 publications

(39 citation statements)

References 20 publications

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“…3). Same phenomenon was also reported for the thin films of CuI prepared by pulse laser deposition technique [14]. The formation of ultrafine CuI grains may be one of the reasons.…”

Section: Resultssupporting

confidence: 77%

Novel Preparation and Photoelectrochemical Properties of γ‐CuI Semiconductor Nanocrystallites on Screen‐Printed Carbon Electrodes

et al. 2005

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Cuprous iodide (g-CuI) is an important semiconductor material having a bang gap of 3.1 eV often used for visible light assisted photoelectrochemical and solar energy conservation systems. We report the first and unique preparation of fine and precisely controlled g-CuI semiconductor nanocrystallites on the surface of a screen-printed carbon electrode using a photoelectrochemical copper nanoparticle deposition method with tris(hydroxymethyl)aminomethane (Tris) buffer solution as a control medium. Tris buffer helps to split Cu

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“…3). Same phenomenon was also reported for the thin films of CuI prepared by pulse laser deposition technique [14]. The formation of ultrafine CuI grains may be one of the reasons.…”

Section: Resultssupporting

confidence: 77%

Novel Preparation and Photoelectrochemical Properties of γ‐CuI Semiconductor Nanocrystallites on Screen‐Printed Carbon Electrodes

et al. 2005

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“…11 It is also acidic, causing corrosion of the ITO anode 12 and not very effective as an electron blocking material. 13 In an effort to address some/all of these issues, a range of alternative HTL materials have been investigated, including PSS-free vapor phase polymerized PEDOT, 14,15 graphene oxide, 16 22 It exhibits three crystalline phases, namely, a, b, and c, 23 of which the c-CuI zinc blende structure (cubic), known to form at deposition temperatures below 390 C, is the most interesting for our purpose. c-CuI is a ptype, wide-bandgap ($3.1 eV) 24 semiconductor and, due to its optical transparency and favourable Fermi level energy, has previously been used as a HTL in solid-state dye-sensitized solar cells.…”

mentioning

confidence: 99%

Efficient organic solar cells using copper(I) iodide (CuI) hole transport layers

Peng

Yaacobi‐Gross

Perumal

et al. 2015

Applied Physics Letters

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We report the fabrication of high power conversion efficiency (PCE) polymer/fullerene bulk heterojunction (BHJ) photovoltaic cells using solution-processed Copper (I) Iodide (CuI) as hole transport layer (HTL). Our devices exhibit a PCE value of ∼5.5% which is equivalent to that obtained for control devices based on the commonly used conductive polymer poly(3,4-ethylenedioxythiophene): polystyrenesulfonate as HTL. Inverted cells with PCE >3% were also demonstrated using solution-processed metal oxide electron transport layers, with a CuI HTL evaporated on top of the BHJ. The high optical transparency and suitable energetics of CuI make it attractive for application in a range of inexpensive large-area optoelectronic devices.

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“…[12][13][14][15] The thin organic-inorganic layers of different metal compounds were obtained by many different methods e.g., laser ablation, cathodoluminescence or spin coating. [16][17][18][19] However, there are only a few reports on copper(II) complexes in materials obtained by spin coating method. For example, [Cu 3 (opba)(pmdta) 2 ] (NO 3 ) 2 (pmdta = 1,1,4,7,7-pentamethyl-diethylenetriamine, opba = orthophenylenebis(oxamato)) complex was used to get thin layer of Cu(II) complex on SiO 2 /Si.…”

Section: Introductionmentioning

confidence: 99%

Copper(II) Schiff base complexes and their mixed thin layers with ZnO nanoparticles

2016

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Cu(II) complexes with Schiff bases derived from ethylenediamine (en) and 2-pyridinecarboxaldehyde (pyca), 2,5-dimethoxybenzaldehyde (dmbaH) or 4-imidazolecarboxaldehyde (4Him) were obtained and studied by elemental analysis, UV-VIS and IR spectra. Zinc oxide was synthesized using a simple homogeneous precipitation method with zinc acetate as a starting material. Thin layers of the studied Cu(II) complexes were deposited on Si(111) or ZnO/Si(111) substrates by a spin coating method and characterized with a scanning electron microscopy (SEM/EDS), atomic force microscopy (AFM) and fluorescence spectroscopy. For Cu(II) layers the most intensive fluorescence bands due to intra-ligand transitions were observed between 462 and 503 nm. The fluorescence intensity of thin layers was corelated to the rotation speed. In the case of the [Cu(II)(en(4Him) 2 )Cl 2 ](2a)/ZnO/Si and [Cu(en(dmbaH) 2 )Cl 2 ](3a)/ZnO/Si layers the quenching of the emission band from ZnO at 440 nm (λ ex = 330 nm) associated with various intrinsic or extrinsic lattice defects was noted.

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Characterization of CuI thin films prepared by different techniques

Cited by 49 publications

References 20 publications

Novel Preparation and Photoelectrochemical Properties of γ‐CuI Semiconductor Nanocrystallites on Screen‐Printed Carbon Electrodes

Novel Preparation and Photoelectrochemical Properties of γ‐CuI Semiconductor Nanocrystallites on Screen‐Printed Carbon Electrodes

Efficient organic solar cells using copper(I) iodide (CuI) hole transport layers

Copper(II) Schiff base complexes and their mixed thin layers with ZnO nanoparticles

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