Characterization of CuTe nanofilms grown by underpotential deposition based on an electrochemical codeposition technique

Aydın, Zehra Yazar; Abacı, Serdar

doi:10.1007/s10008-016-3496-9

Cited by 15 publications

(8 citation statements)

References 41 publications

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“…According to the literature, the remaining observable peaks located at 154, 219, 279, and 711 cm −1 agreed well with the Raman characteristic peaks of Cu 2 Te [68,69]. The peak at 154 cm −1 corresponds to the Te-Te vibration [70], while the peak at 219 cm −1 refers to molecules' translational and torsional movements in Cu 2 Te lattice vibrations [71]. The appearance of a peak at 279 cm −1 can be assigned to the A 1 mode, which arose due to the movement of the Cu atoms by Te atoms, whereas the peak at 711 cm −1 was associated with the symmetric Te-O stretching vibration mode [72].…”

Section: Raman Spectroscopysupporting

confidence: 83%

L-band femtosecond fiber laser with Cu₂Te-PVA thin film

Ahmad¹,

Kahar²,

Norisham³

et al. 2021

Laser Phys. Lett.

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For the first time, this research proposed a copper telluride (Cu2Te)-polyvinyl alcohol thin film as a saturable absorber (SA) in an erbium-doped fiber laser (EDFL) operating in the long-wavelength band (L-band). The nonlinear optical absorption measurement of Cu2Te thin film revealed a saturation intensity of 3.26 kW cm−2 and a modulation depth of 2.7%. Furthermore, the mode-locked pulse was successfully generated by integrating a Cu2Te thin film into the L-band cavity at a threshold pump power of 135.61 mW with a center wavelength and pulse duration of 1565.48 nm and 770 fs, respectively. When observing the output mode-locked pulse, the pump power for the EDFL ranged from 135.61 mW to 201.28 mW, with the fundamental mode having a repetition rate 10.28 MHz. Furthermore, the magnitude of the signal-to-noise ratio was approximately 61.3 dB, indicating that the laser was stable with no significant fluctuations during the stability test. Overall, the findings showed that Cu2Te thin film has an excellent output and a promising candidate for an SA, implying that it could have a lot of potentials in pulsed laser application.

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Section: Raman Spectroscopysupporting

confidence: 83%

L-band femtosecond fiber laser with Cu₂Te-PVA thin film

Ahmad¹,

Kahar²,

Norisham³

et al. 2021

Laser Phys. Lett.

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“…The detected peak around 415 cm –1 corresponds to the longitudinal mode of CuSe present in the nanostructure . The Raman spectra at 676 cm –1 is assigned to the ν 3 (Te-O) antisymmetric stretching mode present in the material. , …”

Section: Results and Discussionmentioning

confidence: 95%

“…34 The Raman spectra at 676 cm −1 is assigned to the ν 3 (Te-O) antisymmetric stretching mode present in the material. 35,36 3.2. FESEM, EDX, and TEM Studies.…”

Section: Xrd and Raman Analyses The Structural Analysis Of The Nanopa...mentioning

confidence: 99%

A Facile Microwave-Assisted Nanoflower-to-Nanosphere Morphology Tuning of CuSe_1–xTe_1+x for Optoelectronic and Dielectric Applications

Das¹,

Senapati²,

Pradhan

et al. 2023

ACS Appl. Nano Mater.

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Transition metal chalcogenides have gained significant attention for their optoelectronic and electrical applications in various fields due to their elemental composition-dependent tunable properties. Here, a facile microwave-assisted approach was used to synthesize different CuSe1–x Te1+x -based nanomaterials. By varying the Se and Te concentrations, the morphology of CuSe1–x Te1+x was tuned from nanosheet-based flowers to nanospheres. With the increase in the value of the Te-to-Se content ratio, the material shows the transition from mixed nanosheets/nanospheres to pure nanospheres, where the average sheet thickness and sphere diameter are ∼25 and 80 nm, respectively. The as-synthesized material shows high crystallinity with mixed phases of hexagonal Cu2Te and CuSe. The chemical bonding of the material exhibits shifts of the spectra toward lower binding energies with the decrease in the Se-to-Te ratio. The material exhibits a change in the absorption edge with a blue shift of the optical bandgap for the increase of the Te content. The increment in the absorption makes them eligible for solar cell application. The photoluminescence spectra of different CuSeTe samples show broad emission in the 550–950 nm range with a peak at ∼700 nm. Such optical properties enable CuSeTe materials for possible applications in optoelectronic devices. The dielectric measurement of the sample exhibits an increase in the dielectric constant and loss with temperature, whereas a decrease in both the values is apparent for increase in the frequency. The dielectric study of the material reveals its potential application for energy storage. The photo-response study demonstrated that the material can be employed for photodetector application.

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“…Similar to the halide perovskite system, Cu-based TMD systems, particularly sulfides and selenides, have been extensively studied owing to their attractive electrical and magnetic properties. Conversely, telluride materials are widely preferred for their high photoconversion efficiencies and excellent thermoelectric properties. , To date, several studies on different compositions of Cu and Te, such as Cu 2 Te, Cu 4 Te 3 , and CuTe, , which show variable properties due to changes in their composition ratios and crystal structures, have been reported. For instance, Cu 2 Te has gained significant interest in thermoelectric applications owing to its high electrical conductivity and thermopower output.…”

Section: Introductionmentioning

confidence: 99%

Mesoporous Metastable CuTe₂ Semiconductor

Ashok,

Vasanth,

Nagaura

et al. 2023

J. Am. Chem. Soc.

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Binary metastable semiconductor materials offer exciting possibilities in the field of optoelectronics, such as photovoltaics, tunable photosensors, and detectors. However, understanding their properties and translating them into practical applications can sometimes be challenging, owing to their thermodynamic instability. Herein, we report a temperature-controlled crystallization technique involving electrochemical deposition to produce metastable CuTe 2 thin films that can reliably function under ambient conditions. A series of in situ heating/cooling cycle tests from room temperature to 200 °C followed by spectral, morphological, and compound analyses (such as ultraviolet−visible light spectroscopy, X-ray diffraction (XRD) analysis, and X-ray photoelectron spectroscopy (XPS)) suggest that the seeding electrodes play a key role in the realization of the metastable phase in CuTe 2 films. In particular, CuTe 2 films deposited on Al electrodes exhibit superior crystallinity and long-term stability compared with those grown on a Au substrate. The XRD data of thermally annealed CuTe 2 thin films deposited on Al show a markedly sharp peak, indicating significantly increased crystal-domain sizes. Our method can be used to achieve the metastable phase of CuTe 2 with a bandgap of 1.67 eV and offers outstanding photoresponsivity under different illumination conditions.

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Characterization of CuTe nanofilms grown by underpotential deposition based on an electrochemical codeposition technique

Cited by 15 publications

References 41 publications

L-band femtosecond fiber laser with Cu₂Te-PVA thin film

L-band femtosecond fiber laser with Cu₂Te-PVA thin film

A Facile Microwave-Assisted Nanoflower-to-Nanosphere Morphology Tuning of CuSe_1–xTe_1+x for Optoelectronic and Dielectric Applications

Mesoporous Metastable CuTe₂ Semiconductor

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Characterization of CuTe nanofilms grown by underpotential deposition based on an electrochemical codeposition technique

Cited by 15 publications

References 41 publications

L-band femtosecond fiber laser with Cu2Te-PVA thin film

L-band femtosecond fiber laser with Cu2Te-PVA thin film

A Facile Microwave-Assisted Nanoflower-to-Nanosphere Morphology Tuning of CuSe1–xTe1+x for Optoelectronic and Dielectric Applications

Mesoporous Metastable CuTe2 Semiconductor

Contact Info

Product

Resources

About

L-band femtosecond fiber laser with Cu₂Te-PVA thin film

L-band femtosecond fiber laser with Cu₂Te-PVA thin film

A Facile Microwave-Assisted Nanoflower-to-Nanosphere Morphology Tuning of CuSe_1–xTe_1+x for Optoelectronic and Dielectric Applications

Mesoporous Metastable CuTe₂ Semiconductor