Characterization of deep impurities in semiconductors by terahertz tunneling ionization

Ziemann, E.; Ganichev, Sergey; Prettl, Wilhelm; Yassievich, I. N.; Perel, V. I.

doi:10.1063/1.372423

Cited by 66 publications

(52 citation statements)

References 11 publications

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“…The spatial beam distribution has an almost Gaussian profile which is measured by a pyroelectric camera. 36 Right (σ + ) and left (σ − ) handed circularly polarized light is obtained by a λ/4 plate. The experimental geometry is sketched in Fig.…”

Section: Methodsmentioning

confidence: 99%

Giant photocurrents in a Dirac fermion system at cyclotron resonance

et al. 2013

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We report on the observation of the giant photocurrents in HgTe/HgCdTe quantum well (QW) of critical thickness at which a Dirac spectrum emerges. At an exciting QW of 6.6 nm width by terahertz (THz) radiation and sweeping magnetic field we detected a resonant photocurrent. Remarkably, the position of the resonance can be tuned from negative (−0.4 T) to positive (up to 1.2 T) magnetic fields by means of optical doping. The photocurrent data, accompanied by measurements of radiation transmission as well as Shubnikov-de Haas and quantum Hall effects, prove that the photocurrent is caused by cyclotron resonance in a Dirac fermion system, which allows us to obtain the effective electron velocity v ≈ 7.2 × 10 5 m/s. We develop a microscopic theory of the effect and show that the inherent spin-dependent asymmetry of light-matter coupling in the system of Dirac fermions causes the electric current to flow.

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Section: Methodsmentioning

confidence: 99%

Giant photocurrents in a Dirac fermion system at cyclotron resonance

et al. 2013

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“…Finally, we estimate the ratchet current magnitude for Si-MOSFETs following Eq. (24). The estimation of the current density j normalized by the laser radiation intensity I yields j/I ∼ 1 × 10 −9 A cm/W for the electron density N s = 3.8 × 10 12 cm −2 and effective field F = 1.4 × 10 5 V/cm (corresponding to the energy distance ε 21 = 35 meV at the gate voltage V g = 20 V, see Fig.…”

Section: Discussionmentioning

confidence: 99%

“…The radiation at normal incidence was focused in a spot of about 1 to 3 mm diameter. The spatial beam distribution had an almost Gaussian profile which was measured by a pyroelectric camera [24]. The experimental geometry is illustrated in the inset of Fig.…”

Section: Samples and Techniquementioning

confidence: 99%

Magnetic quantum ratchet effect in Si-MOSFETs

Ганичев¹,

Tarasenko²,

Karch³

et al. 2014

J. Phys.: Condens. Matter

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We report on the observation of magnetic quantum ratchet effect in metal-oxide-semiconductor field-effect-transistors on silicon surface (Si-MOSFETs). We show that the excitation of an unbiased transistor by ac electric field of terahertz radiation at normal incidence leads to a direct electric current between the source and drain contacts if the transistor is subjected to an in-plane magnetic field. The current rises linearly with the magnetic field strength and quadratically with the ac electric field amplitude. It depends on the polarization state of the ac field and can be induced by both linearly and circularly polarized radiation. We present the quasi-classical and quantum theories of the observed effect and show that the current originates from the Lorentz force acting upon carriers in asymmetric inversion channels of the transistors.

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“…The beam has an almost Gaussian form, which is measured by a pyroelectric camera. 38 All experiments are performed at normal incidence of light. Photocurrents are measured perpendicularly (J y ) and parallel (J x ) to the applied magnetic field (B x ), referred to as transverse and longitudinal photocurrents, respectively.…”

Section: Samples and Experimental Techniquesmentioning

confidence: 99%

Interplay of spin and orbital magnetogyrotropic photogalvanic effects in InSb/(Al,In)Sb quantum well structures

et al. 2012

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We report on the observation of linear and circular magnetogyrotropic photogalvanic effects in InSb/(Al,In)Sb quantum well structures. We show that intraband (Drude-type) absorption of terahertz radiation in the heterostructures causes a dc electric current in the presence of an in-plane magnetic field. The photocurrent behavior upon variation of the magnetic field strength, temperature, and wavelength is studied. We show that at moderate magnetic fields, the photocurrent exhibits a typical linear field dependence. At high magnetic fields, however, it becomes nonlinear and inverses its sign. The experimental results are analyzed in terms of the microscopic models based on asymmetric relaxation of carriers in the momentum space. We demonstrate that the observed nonlinearity of the photocurrent is caused by the large Zeeman spin splitting in InSb/(Al,In)Sb structures and an interplay of the spin-related and spin-independent roots of the magnetogyrotropic photogalvanic effect.

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Characterization of deep impurities in semiconductors by terahertz tunneling ionization

Cited by 66 publications

References 11 publications

Giant photocurrents in a Dirac fermion system at cyclotron resonance

Giant photocurrents in a Dirac fermion system at cyclotron resonance

Magnetic quantum ratchet effect in Si-MOSFETs

Interplay of spin and orbital magnetogyrotropic photogalvanic effects in InSb/(Al,In)Sb quantum well structures

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