2012
DOI: 10.1016/j.jcrysgro.2011.11.042
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Characterization of deep levels in a-plane GaN epi-layers grown using various growth techniques

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Cited by 5 publications
(2 citation statements)
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“…Meanwhile, the trap A1 with a relatively low DLTS signal has a density of 5.0 × 10 12 /cm 3 and capture cross section 1.14 × 10 −17 cm 2 . These low trap densities are comparable to those of a-plane GaN layers with high crystal quality grown by MOCVD 13 , 15 , 16 . Considering this, we speculate that a-plane GaN templates grown by HVPE possess a desirable advantage in view of throughput for the formation of opto-electrical devices, compared to those grown by MOCVD.…”
Section: Resultssupporting
confidence: 56%
“…Meanwhile, the trap A1 with a relatively low DLTS signal has a density of 5.0 × 10 12 /cm 3 and capture cross section 1.14 × 10 −17 cm 2 . These low trap densities are comparable to those of a-plane GaN layers with high crystal quality grown by MOCVD 13 , 15 , 16 . Considering this, we speculate that a-plane GaN templates grown by HVPE possess a desirable advantage in view of throughput for the formation of opto-electrical devices, compared to those grown by MOCVD.…”
Section: Resultssupporting
confidence: 56%
“…Note that the DLTS signal abruptly starts to increase around 260 K. Therefore, we are assured that deep-level defects within the a-plane GaN template grown via in situ nanodot formation can be one of the important sources causing variation in Φ B and n for the two linear fitting regions around 260 K, confirmed by DLTS at different energy levels below the conduction band edge as shown in Figure 4 . It is noticeable that the characteristics of the unintentional charge traps embedded in the a-plane GaN template grown via in situ nanodot formation are comparable to those of a-plane GaN layers grown using other methods [ 46 , 47 ]. This indicates that the a-plane GaN templates grown via in situ nanodot formation possess a great throughput advantage for various applications, compared to those grown using other methods.…”
Section: Resultsmentioning
confidence: 85%