Characterization of defect levels in chemically deposited CdS films in the cubic-to-hexagonal phase transition

Vigil, O.; Riech, I.; García‐Rocha, M.; Zelaya-Ángel, O.

doi:10.1116/1.580735

Cited by 134 publications

(73 citation statements)

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“…18 We have not found other PL bands which have been sometimes reported, generally placed at lower energies, which should indicate another type of defect such as cadmium or sulphur vacancies, interstitial cadmium, etc., confirming the semiconductor quality. 16 The transmission ͑dotted line͒ shows the dip due to the ͑111͒ planes in addition to the semiconductor band edge.…”

Section: ͓S0003-6951͑98͒01939-1͔mentioning

confidence: 90%

CdS photoluminescence inhibition by a photonic structure

Blanco

López

Mayoral

et al. 1998

Applied Physics Letters

163

108

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Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films Appl. Phys. Lett. 101, 031913 (2012) Surface-bound-exciton emission associated with domain interfaces in m-plane ZnO films Appl. Phys. Lett. 101, 011901 (2012) Superradiance from one-dimensionally aligned ZnO nanorod multiple-quantum-well structures Appl. Phys. Lett. 100, 233118 (2012) Optical properties of edge dislocations on (100) prismatic planes in wurtzite ZnO introduced at elevated temperatures J. Appl. Phys. 111, 113514 (2012) Emission from a dipole-forbidden energy state in a ZnO quantum dot induced by a near-field interaction with a fiber probe

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Section: ͓S0003-6951͑98͒01939-1͔mentioning

confidence: 90%

CdS photoluminescence inhibition by a photonic structure

Blanco

López

Mayoral

et al. 1998

Applied Physics Letters

163

108

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“…[41][42][43][44][45][46] Depending on the growth method and CdS grain size the red luminescence is found centered at 1.67, 44 43,46 It is believed that the red luminescence is caused by transitions of electrons trapped in surface states to the valence band, 39,40 and this effect is therefore correlated with the accumulation of crystallographic defects in CdS layers grown at low deposition temperatures. Annealing of smallgrained CdS films increases grain size, decreases the number of grain boundaries, heals lattice defects, and reduces strain in the layer.…”

Section: -5mentioning

confidence: 99%

Photoluminescence study of polycrystalline photovoltaic CdS thin film layers grown by close-spaced sublimation and chemical bath deposition

Abken

Halliday

Durose

2009

Journal of Applied Physics

123

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Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. Photoluminescence ͑PL͒ measurements were used to study the effect of postdeposition treatments by annealing and CdCl 2 activation on polycrystalline CdS layer grown by close-spaced sublimation ͑CSS͒ and chemical bath deposition ͑CBD͒. CdS films were either annealed in a temperature range of 200-600°C or CdCl 2 treated between 300-550°C. The development of "red," "intermediate orange," "yellow," and "green" luminescence bands is discussed in comparison with PL assignments found in literature. PL spectra from CdS layer grown by CSS are dominated by the yellow band with transitions at 2.08 and 1.96 eV involving ͑Cd i -A͒, ͑V S -A͒ complex states where A represents an acceptor. Green luminescence bands are observed at 2.429 and 2.393 eV at higher annealing temperature of 500-600°C or CdCl 2 treatment above 450°C, and these peaks are associated with zero and a longitudinal optical phonon replica of "free-to-bound" transitions. As grown CBD-CdS films show a prominent red band with four main peaks located at 1.43, 1.54, 1.65, and 1.77 eV, believed to be phonon replicas coupled with local vibrational modes. This remains following postdeposition treatment. The red luminescence is associated with V S surface states and in the case of CdCl 2 treatment with ͑V Cd -Cl S ͒ centers. Postdeposition treatments of CBD and CdS promote the evolution of an intermediate orange band at 2.00 eV, most likely a donor-acceptor pair, and a yellow band at 2.12 eV correlated with ͑Cd i -V Cd ͒ centers. The green luminescence bands observed at 2.25 and 2.34 eV are associated with transitions from deep donor states ͑e.g., Cd i ͒ to the valence band. These states form due to crystallinity enhancement and lattice conversion during annealing or CdCl 2 activation. Observed changes in PL bands provide detailed information about changes in radiative recombination centers in CdS layer, which are suggested to occur during device processing of CdTe/CdS thin film solar cells.

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“…The peak at 537 nm can be attributed to the presence of sulfur species on the surface of the sample [25]. Vigil et al [27] observed a similar peak at 544 nm which they attributed to sulfur interstitial acceptors I − s compensated by a close ionized donor center. The PL peak observed at 573 nm corresponds to radiative recombination involving shallow levels in the band gap due to native impurities.…”

Section: Resultsmentioning

confidence: 61%

“…The emission peaks at 585 nm and 594 nm are due to deexcitation of electron via the surface/defect states present in the films. The electrons, after excitation across the band edge, are transferred nonradiatively to the surface states extending into the band gap region [27]. The peak observed at 594 nm is discussed in the literature as a donor-acceptor pair (DAP) [28].…”

Section: Resultsmentioning

confidence: 99%

Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn₂S₃thin films

Srivind¹,

Nagarethinam²,

Balu³

2016

Materials Science-Poland

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Nanoneedle structured Sn 2 S 3 thin films were prepared by spray pyrolysis technique from aqueous solutions of tin (II) chloride and thiourea, keeping the molar concentrations of S:Sn = 0.01:0.01, 0.02:0.02, 0.03:0.03 and 0.04:0.04 in the starting solutions. XRD studies reveal that all the films exhibit orthorhombic crystal structure with a preferential orientation along the [2 1 1] direction. The peak intensity of the (2 1 1) plane is found to be maximum for the film coated with 0.02:0.02 S:Sn molar concentration which confirms the improved crystalline nature of this film. SEM images depict that the film coated with S:Sn molar concentration 0.02:0.02 exhibit needle shaped grains. The optical band gap exhibits red shift from 2.12 eV to 2.02 eV with an increase in S:Sn precursor molar concentration. Electrical studies show that the films having S:Sn molar concentrations 0.01:0.01 and 0.02:0.02 exhibit minimum resistivity values of 0.238 and 0.359 Ω·cm, respectively.

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Characterization of defect levels in chemically deposited CdS films in the cubic-to-hexagonal phase transition

Cited by 134 publications

References 0 publications

CdS photoluminescence inhibition by a photonic structure

CdS photoluminescence inhibition by a photonic structure

Photoluminescence study of polycrystalline photovoltaic CdS thin film layers grown by close-spaced sublimation and chemical bath deposition

Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn₂S₃thin films

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Characterization of defect levels in chemically deposited CdS films in the cubic-to-hexagonal phase transition

Cited by 134 publications

References 0 publications

CdS photoluminescence inhibition by a photonic structure

CdS photoluminescence inhibition by a photonic structure

Photoluminescence study of polycrystalline photovoltaic CdS thin film layers grown by close-spaced sublimation and chemical bath deposition

Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn2S3thin films

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Product

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Optimization of S:Sn precursor molar concentration on the physical properties of spray deposited single phase Sn₂S₃thin films