Characterization of die stresses in microprocessor packages subjected to thermal cycling

Packaging-induced die-stresses due to temperature effects on various materials of the package are characterized using piezoresistive van der Pauw stress sensors over a temperature range of −180° C to 80° C. Piezo-resistive coefficients extracted previously are then used to obtain a mapping between change in resistance and corresponding stress at all tested temperatures. The obtained values of stress are compared with finite element simulation results.

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Packaging Induced Die Stress Characterization Using van der Pauw Sensors Between −180°C and 80°C

Goteti

Akkara

Jaeger

et al. 2014

International Symposium on Microelectronics

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Characterization of die stresses in microprocessor packages subjected to thermal cycling

Cited by 1 publication

References 34 publications

Packaging Induced Die Stress Characterization Using van der Pauw Sensors Between −180°C and 80°C

Packaging Induced Die Stress Characterization Using van der Pauw Sensors Between −180°C and 80°C

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