1993
DOI: 10.1016/0956-7151(93)90180-z
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Characterization of diffusion induced grain boundary migration in the Ag/Cu system

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Cited by 12 publications
(9 citation statements)
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“…When v λD gb B , the penetration depth of the solute atoms into the GB (characterized by y c ) will be small and vice versa. The concentration of B atoms may not be uniform in the z-direction either, but this cannot be analytically solved and the situation varies largely for different materials [276,287,288,289,290,291].…”
Section: A Grain Boundary As a Vacancy/self-interstitial Sinkmentioning
confidence: 99%
“…When v λD gb B , the penetration depth of the solute atoms into the GB (characterized by y c ) will be small and vice versa. The concentration of B atoms may not be uniform in the z-direction either, but this cannot be analytically solved and the situation varies largely for different materials [276,287,288,289,290,291].…”
Section: A Grain Boundary As a Vacancy/self-interstitial Sinkmentioning
confidence: 99%
“…It can be inferred that in addition to volume and stationary grain boundary diffusion, there may be some other faster diffusion path available as the diffusion time is prolonged, i.e., diffusion along moving grain boundary, i.e., grain boundary induced diffusion itself (DIGM) is very likely. As the studies on DIGM in Zn/Fe [15] and Ag/Cu [16] systems showed, the diffusion coefficient in a moving boundary is two to three orders of magnitude larger than that along a stationary boundary. It has been also found in Ag/Cu [16] that the kinetics of the penetration of the DIGM zone is a linear function of time.…”
Section: Resultsmentioning
confidence: 97%
“…As the studies on DIGM in Zn/Fe [15] and Ag/Cu [16] systems showed, the diffusion coefficient in a moving boundary is two to three orders of magnitude larger than that along a stationary boundary. It has been also found in Ag/Cu [16] that the kinetics of the penetration of the DIGM zone is a linear function of time. In addition, it was reported that DIGM has occurred in phase formed by the interface reaction in 40Sn-Bi/Cu system [17].…”
Section: Resultsmentioning
confidence: 97%
“…However, composition change was not observed. After that many researchers have shown that at low temperature the composition change due to DIGM is much faster than due to the volume diffusion process [3][4][5]. Diffusion coefficient of solute in DIGM has been observed to be 8-10 orders of magnitude higher than that in volume diffusion process.…”
Section: Introductionmentioning
confidence: 95%