Characterization of dry etching of TiO&lt;sub&gt;2&lt;/sub&gt;/SiO&lt;sub&gt;2&lt;/sub&gt; distributed Bragg reflectors for tunable optical sensor arrays

Setyawati, Onny; Engenhorst, M.; Bartels, Martin; Daneker, V.; Wittzack, S.; Woit, T.; Kohler, F.; Hillmer, H.

doi:10.1117/1.3524828

Cited by 3 publications

References 11 publications

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Meniscus-Mask Lithography for Fabrication of Narrow Nanowires

2015

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We demonstrate the efficiency of meniscus-mask lithography (MML) for fabrication of precisely positioned nanowires in a variety of materials. Si, SiO2, Au, Cr, W, Ti, TiO2, and Al nanowires are fabricated and characterized. The average widths, depending on the materials, range from 6 to 16 nm. A broad range of materials and etching processes are used and the generality of approach suggests the applicability of MML to a majority of materials used in modern planar technology. High reproducibility of the MML method is shown and some fabrication issues specific to MML are addressed. Crossbar structures produced by MML demonstrate that junctions of nanowires could be fabricated as well, providing the building blocks required for fabrication of nanowire structures of varied planar geometry.

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Meniscus-Mask Lithography for Fabrication of Narrow Nanowires

2015

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Reactive Ion etching of TiO2 thin film: The impact of different gaseous

Adzhri

Arshad

Fathil

et al. 2015

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)

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Single-step inductively coupled plasma etching of sputtered Nb2O5/SiO2 multilayer stacks using chromium etch mask

Taimoor

Alatawi

Reuter

et al. 2017

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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This paper presents the dry etching characteristics of Nb2O5/SiO2 multilayer stacks deposited using ion beam sputtering. Dry etching is achieved by using a combination of CHF3 and Ar gases in an inductively coupled plasma (ICP)-reactive ion etching system. The effect of the etching parameters such as the gas ratio (CHF3/Ar), radio-frequency power, ICP power, chamber pressure, and temperature is investigated. An etching recipe is optimized to achieve a high etch rate, good selectivity, and optimum etch profile. The optimized etching recipe provides a single step etch solution for both dielectric materials. Furthermore, the deposition and structuring process of a chromium based etch mask is investigated.

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Characterization of dry etching of TiO<sub>2</sub>/SiO<sub>2</sub> distributed Bragg reflectors for tunable optical sensor arrays

Cited by 3 publications

References 11 publications

Meniscus-Mask Lithography for Fabrication of Narrow Nanowires

Meniscus-Mask Lithography for Fabrication of Narrow Nanowires

Reactive Ion etching of TiO2 thin film: The impact of different gaseous

Single-step inductively coupled plasma etching of sputtered Nb2O5/SiO2 multilayer stacks using chromium etch mask

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