Characterization of e-beam evaporated hafnium oxide thin films on post thermal annealing

Ramzan, Muhammad; Wasiq, M.F.; Rana, Anwar Manzoor; Ali, Syed Danish; Nadeem, M.

doi:10.1016/j.apsusc.2013.07.001

Cited by 23 publications

(13 citation statements)

References 30 publications

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“…It is clear from this plot that HfO 2 /Ag/HfO 2 structure exhibits the highest refractive index, such as at λ¼632.8 nm, n¼3.47. The n value of 2.08 at λ¼364 nm is found to be very close to the bulk value of 2.098 reported for hafnium oxide [38,39]. Extinction coefficient k(λ) can be determined from reflectance and transmittance data using the following formula [37]:…”

Section: Hfo 2 Multilayer Films As a Heat Mirrormentioning

confidence: 75%

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Optical characterization of hafnium oxide thin films for heat mirrors

Ramzan

Rana

Ahmed

et al. 2015

Materials Science in Semiconductor Processing

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Section: Hfo 2 Multilayer Films As a Heat Mirrormentioning

confidence: 75%

“…The absorption index or extinction coefficient, 'k' may be determined from absorption coefficient α, using the following formula [38],…”

Section: Optical Propertiesmentioning

confidence: 99%

Optical characterization of hafnium oxide thin films for heat mirrors

Ramzan

Rana

Ahmed

et al. 2015

Materials Science in Semiconductor Processing

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“…Wang [69]. It was shown that dielectric constant, leakage current density, and EOT of the films deposited by electron beam evaporation were κ = 21.2, J = 2×10 −3 A/cm 2 at 1 V and 0.65 nm, respectively [70].…”

Section: Fabrication Methodsmentioning

confidence: 99%

“…of results of different coating methods[43,58,[62][63][64][65][66][67][68][69][70][71][72][73][74][75][76]. × 10 −8 A/cm 2 at 1 V EOT= 2.73 nm at 700 • C…”

mentioning

confidence: 99%

Hf-Based High-κ Dielectrics: A Review

KOL

Oral

2019

Acta Phys. Pol. A

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In the last decades, the number of transistors per chip with integrated circuits has increased leading to reduction in the thickness of silicon dioxide used as gate dielectrics. However, at small dielectric thicknesses leakage current formation has begun due to the quantum tunneling effect. Thus, it became essential to replace SiO2 with alternative dielectrics with high dielectric constant to maintain the same capacitance at higher gate dielectric thicknesses. This review analyzes alternative high-κ dielectric materials substituting for SiO2. For this reason, the properties of materials with high dielectric constant are compared to SiO2 with a special emphasis on HfO2, since it is the most promising high-κ dielectric to replace SiO2. The fundamental points concerning HfO2 gate dielectrics are their high dielectric constant and their thermodynamic stability when in contact with Si. In this article, properties of HfO2 fabricated with different coating methods and doped with different elements such as N, Si, Al, Ti and Ta have been compared and discussed. In the conclusion part, we have summarized the results of characterization obtained by X-ray diffraction, scanning electron microscopy, leakage current density-voltage (J-V ), capacitance-voltage (C-V ) and UV-vis spectroscopy of HfO2 thin films.

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“…The XRD analysis confirms the polycrystal structures of HfO 2 and ZrO 2 films shown in the HRTEM images in Figure 6a,b. The HfO 2 film has a dominating (−111) crystal orientation [35], while the ZrO2 film has a dominating (111) crystal orientation [36]. Figure 8 shows the diffractive index and extinction coefficient of the HfO 2 and ZrO 2 films as a function of wavelength.…”

Section: Methodsmentioning

confidence: 99%

Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

2020

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We report the growth of nanoscale hafnium dioxide (HfO2) and zirconium dioxide (ZrO2) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using the HfO2 and ZrO2 thin films as the gate oxide. Tetrakis (dimethylamino) hafnium (Hf[N(CH3)2]4) and tetrakis (dimethylamino) zirconium (IV) (Zr[N(CH3)2]4) were used as the precursors, while O2 gas was used as the reactive gas. The PE-ALD-grown HfO2 and ZrO2 thin films were analyzed using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM). The XPS measurements show that the ZrO2 film has the atomic concentrations of 34% Zr, 2% C, and 64% O while the HfO2 film has the atomic concentrations of 29% Hf, 11% C, and 60% O. The HRTEM and XRD measurements show both HfO2 and ZrO2 films have polycrystalline structures. n-channel and p-channel metal-oxide semiconductor field-effect transistors (nFETs and pFETs), CMOS inverters, and CMOS ring oscillators were fabricated to test the quality of the HfO2 and ZrO2 thin films as the gate oxide. Current-voltage (IV) curves, transfer characteristics, and oscillation waveforms were measured from the fabricated transistors, inverters, and oscillators, respectively. The experimental results measured from the HfO2 and ZrO2 thin films were compared.

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Characterization of e-beam evaporated hafnium oxide thin films on post thermal annealing

Cited by 23 publications

References 30 publications

Optical characterization of hafnium oxide thin films for heat mirrors

Optical characterization of hafnium oxide thin films for heat mirrors

Hf-Based High-κ Dielectrics: A Review

Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

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