Characterization of electrically inactive arsenic atoms in heavily arsenic‐doped Si

Abstract

The origin of electrically inactive arsenic (As) atoms in heavily As-doped Si(100) wafers after rapid thermal annealing has been studied by using several advanced techniques. Direct experimental evidence linking the formation of As-vacancy complexes to the inactive As atoms is shown. Approximately 78% of the As atoms sit on the Si substitutional sites in spite of their inactivity, However, the local strain relating to the implanted As atoms is higher than expected for the implanted As concentration. In addition, the Si lattice constant expanded as the As concentration increased. The results indicate that most of the As atoms in the heavily doped region exist in a uniform layer of As-vacancy complexes combined with substitutional As atoms.