Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots

Futamura, Yuto; Makihara, Katsunori; Ohta, Akio; Ikeda, Mitsuhisa; Miyazaki, Seiichi

doi:10.1587/transele.2018fup0007

Cited by 2 publications

(1 citation statement)

References 14 publications

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“…In our previous work, we succeeded in the fabrication of multiple-stacked Siquantum-dots (Si-QDs) layers with ultrathin SiO2 interlayers by repeating low-pressure chemical vapor deposition (LPCVD) using pure SiH4 and dry O2 thermal oxidation (12)(13). Recently, we also demonstrated electron emission from diodes with multiple-stacked Si-QDs structures under biases of 6V and over, in which electric field is concentrated the upper dot layers as evaluated by hard X-ray photoelectron spectroscopy (14)(15)(16)(17)(18)(19). To enhance electron emission efficiency, one major issue regarding the electron emission device application of the multiple-stacked Si-QDs is minimizing electron scattering at top electrodes.…”

Section: Introductionmentioning

confidence: 99%

Electron Field Emission from Multiply-Stacked Si Quantum Dots Structures with Graphene Top-Electrode

et al. 2020

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We have fabricated a diode with a multiple stacked Si-QDs structure and a single layer graphene top electrode, and studied their electron field emission properties. Electron emission current from the diode was observed by the application of forward biases of 6.0 V and over, which is ~1.0 V lower than that from a diode with a Au top electrode. In addition, we found that electron emission efficiency was increased by a factor of ~ 100 by replacing the top electrode from Au to graphene. This result is explained by the reduction of electron scattering at the top electrode. The results lead to the development of high efficiency planar-type electron emission devices.

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