Characterization of electroplated FeSe thin films

Thanikaikarasan, S.; Mahalingam, T.; Raja, M.; Kim, Taegyu; Kim, Yong Deak

doi:10.1007/s10854-008-9794-y

Cited by 49 publications

(33 citation statements)

References 19 publications

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“…They found that the grain size is inversely proportional to the optical band gap and that the film thickness affects the optical band gap. Quantum size effect on the optical band gap was discussed in the literature [26][27][28][29][30]. The effect of structure on the optical band gap results from the fact that the number of grains per unit cell and the number of spaces per unit cell affect the density of the unit cell (in the present work molecular weight = 461.96 g/mol, density = 8.449 g/cm 3 ).…”

Section: Optical and Dielectric Propertiesmentioning

confidence: 94%

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Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

Tezel

Kariper

2017

Materials Science-Poland

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Bismuth oxide thin film was deposited by chemical bath deposition (CBD) technique onto a glass substrate. The grain size (D), dislocation density (δ) and number of crystallites per unit area (N), i.e. structural properties of the thin film were determined as 16 nm, 39.06 × 10 −4 line/nm 2 , 31.25 × 10 −3 1/nm 2 , respectively. Optical transmittance properties of the thin film were investigated by using a UV-Vis spectrophotometer. The optical band gap (E g ) for direct transitions, optical transmission (T %), reflectivity (R %), absorption, refractive index (n r ), extinction coefficient (k), dielectric constant ( ) of the thin film were found to be 3.77 eV, 25.23 %, 32.25 %, 0.59, 3.62, 0.04 and 2.80, respectively. The thickness of the film was measured by AFM, and was found to be 128 nm. Contact angles of various liquids on the oxide thin film were determined by Zisman method, and surface tension was calculated to be 31.95 mN/m.

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Section: Optical and Dielectric Propertiesmentioning

confidence: 94%

“…Once absorption coefficient is determined, the value of optical band gap can be found. The value of optical band gap energy has been established from the absorption spectra of the films by using the following formula [26][27][28][29]:…”

Section: Optical and Dielectric Propertiesmentioning

confidence: 99%

Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

Tezel

Kariper

2017

Materials Science-Poland

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“…There are also attempts to grow FeSe films by electrochemical techniques [109][110][111][112][113][114] and chemical vapor deposition techniques [115,116]. However, T zero c comparable to that of bulk samples has not been obtained or the resistivity was not measured in these films.…”

Section: -Systemmentioning

confidence: 99%

Comparative Review on Thin Film Growth of Iron-Based Superconductors

2017

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Abstract:Since the discovery of the novel iron-based superconductors, both theoretical and experimental studies have been performed intensively. Because iron-based superconductors have a smaller anisotropy than high-T c cuprates and a high superconducting transition temperature, there have been a lot of researchers working on the film fabrication of iron-based superconductors and their application. Accordingly, many novel features have been reported in the films of iron-based superconductors, for example, the fabrication of the epitaxial film with a higher T c than bulk samples, the extraction of the metastable phase which cannot be obtained by the conventional solid state reaction, and so on. In this paper, we review the progress of research on thin film fabrications of iron-based superconductors, especially the four categories: LnFeAs(O,F) (Ln = Lanthanide), AEFe 2 As 2 (AE = Alkaline-earth metal), FeCh (Ch = Chalcogen), and FeSe monolayer. Furthermore, we focus on two important topics in thin films of iron-based superconductors; one is the substrate material for thin film growth on the iron-based superconductors, and the other is the whole phase diagram in FeSe 1−x Te x which can be obtained only by using film-fabrication technique.

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“…However, no one has succeeded to obtain superconducting FeSe films. [15][16][17][18][19] Here, we show a synthesis of superconducting FeSe films using the electrochemical method.Electrochemical depositions were performed by a three-electrode method.Cathode, anode and reference electrode were Pt plate, Fe plate and Ag/AgCl electrode, respectively. In order to prepare electrolyte, we dissolved 0.01 mol/l FeSO 4 •7H 2 O and 0.005 mol/l SeO 2 into distilled water.…”

mentioning

confidence: 99%

“…However, no one has succeeded to obtain superconducting FeSe films. [15][16][17][18][19] Here, we show a synthesis of superconducting FeSe films using the electrochemical method.…”

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confidence: 99%

Electrochemical Synthesis of Iron-Based Superconductor FeSe Films

et al. 2012

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The superconducting FeSe films were successfully fabricated using the electrochemical synthesis. The composition ratio of Fe and Se can be controlled by the electric potential and pH value. We found that the FeSe films deposited at the electric potential -1.75 V and pH 2.3 show the superconducting transition at 3.5 K. The establishment of this electrochemical synthesis technique will provide many advantages for application.Since the discovery of superconductivity in LaFeAsO 1-x F x 1 , several types of iron-based superconductors have been discovered. [2][3][4][5][6][7] Among them, FeSe with T c ∼8 K is quite promising for practical applications because of the simplest structure and less toxicity compared to other As-based compounds. Furthermore, the superconducting transition temperature T c dramatically increases up to 37 K under high pressure. The electrochemical deposition has further advantages to fabricate FeSe films because of the inexpensive equipment, quick synthesis, and ease of deposition of large area at room temperature. There are some reports about the challenge for the electrochemical deposition of iron chalcogenide. However, no one has succeeded to obtain superconducting FeSe films. [15][16][17][18][19] Here, we show a synthesis of superconducting FeSe films using the electrochemical method.Electrochemical depositions were performed by a three-electrode method.Cathode, anode and reference electrode were Pt plate, Fe plate and Ag/AgCl electrode, respectively. In order to prepare electrolyte, we dissolved 0.01 mol/l FeSO 4 •7H 2 O and 0.005 mol/l SeO 2 into distilled water. The HNO 3 was used as pH adjustor. We performed cyclic voltammetry (CV) in a range of the electric potential between -0.4 and -2.5 V.The films were characterized by x-ray diffraction with Cu-Kα radiation using the 2θ-θ method. The actual composition of the films was investigated by the energy dispersive x-ray spectrometry (EDX). The temperature dependence of magnetization was measured using a superconducting quantum interface device (SQUID) magnetometer with an applied field of 5 Oe. The electric potential dependence of the composition ratio of Fe and Se estimated by EDX measurements is shown in Fig. 2. At the electric potential of -1.00 V, Se was dominantly detected. At the electric potential between -1.50 and -2.50 V, Se and Fe composition ratio was estimated to be around 60 and 40 %. We found that the Se composition is slightly higher than that of Fe at the electric potentials between -1.50 and -2.50 V.The XRD patterns for the samples obtained at the electric potential of -1.00 and -2.50 V are summarized in Fig. 3. At the electric potential of -1.0 V, only hexagonal Se peaks were observed, which is consistent with EDX results. In contrast, we found that peaks identified as tetragonal FeSe were appeared in the samples at -1.5, -1.75 and -2.00V. However, the peaks are noticeably broadened because of Se-rich composition. SinceFeSe phase is stable in the slightly Fe-rich condition 4, 20 , we tried to control the Fe/Se rati...

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Characterization of electroplated FeSe thin films

Cited by 49 publications

References 19 publications

Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

Comparative Review on Thin Film Growth of Iron-Based Superconductors

Electrochemical Synthesis of Iron-Based Superconductor FeSe Films

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