Characterization of enhanced field emission from HfC-coated Si emitter arrays through parameter extraction

Nicolaescu, D.; Sato, Takanobu; Nagao, Masayoshi; Filip, V.; Kanemaru, S.; Itoh, J.

doi:10.1116/1.1689311

Cited by 15 publications

(21 citation statements)

References 17 publications

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“…32 The array field emission model has been built up using equations that describe the electron emission current from individual emitters together with nonuniform distribution functions, f 1 ͑R , R 0 , R ͒ ͑log-normal͒ and f 2 ͑ , 0 , ͒ ͑single peak͒, giving the dispersion of these parameters within the array. 32 The array field emission model has been built up using equations that describe the electron emission current from individual emitters together with nonuniform distribution functions, f 1 ͑R , R 0 , R ͒ ͑log-normal͒ and f 2 ͑ , 0 , ͒ ͑single peak͒, giving the dispersion of these parameters within the array.…”

Section: Modeling Frameworkmentioning

confidence: 99%

“…31,32 However, numerically computing the array current as a double integral, while being a straightforward procedure, requires extensive computing time. 31,32 However, numerically computing the array current as a double integral, while being a straightforward procedure, requires extensive computing time.…”

Section: Modeling Frameworkmentioning

confidence: 99%

“…[3][4][5][6][7][8][9][10] Several studies related to the emitter operation in gas ambient have been reported, concerning especially Spindt-type emitters. 31,32 Test arrays of gated Si emitters with N tips = 100 tips have been fabricated.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Emission statistics for Si and HfC emitter arrays after residual gas exposure

Nicolaescu

Nagao

Sato

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inField emitter array with a memory function for ultrahigh luminance field emission display Field emission arrays ͑FEAs͒ comprising 100 Si or HfC coated Si emitters have been fabricated. The FEAs emission properties were measured in ultra high vacuum conditions and after being subject to Ar and O 2 residual gases with partial pressures in the range 10 −6 to 10 −4 Pa. The influence of residual gases on the FEAs field emission properties has been comparatively assessed using the model parameter extraction method. The array field emission model uses equations that describe the electron emission current from individual emitters of given radius R and work function together with nonuniform distribution functions giving the dispersion of these parameters within the array. A simplified relationship for the array emission current depending on a single integral instead of a double one has been derived. A nonlinear extraction algorithm using partial derivatives of the objective function is used, which gives fast and accurate results. Both Si and HfC emitters exhibit ͑to a different degree͒ tightening of the radius distribution with time and more uniform emission, when exposed to O 2 residual gas. The current degradation of Si and HfC arrays, when exposed to Ar residual gas, is mostly associated with the work function increase. HfC emitters have higher emission currents, lower noise level, and better stability of the emission than Si emitters. These properties are discussed in terms of the array parameter statistics.

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Section: Modeling Frameworkmentioning

confidence: 99%

Section: Modeling Frameworkmentioning

confidence: 99%

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Emission statistics for Si and HfC emitter arrays after residual gas exposure

Nicolaescu

Nagao

Sato

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…HfC-coated emitter arrays on poly-Si integrated with poly-Si thin-film transistors ͑TFTs͒ for current control have been fabricated. The method has been previously applied to analyze the emission data for Spindt-type emitters, 7 c-Si emitter arrays, 8 and HfC / c-Si FEAs in vacuum or in the presence of residual gases. The roomtemperature Ar ion sputtering produces emitters with uniform and smooth surfaces, with the structures having negligible gate currents.…”

Section: Introductionmentioning

confidence: 99%

Parameter dispersion characterization for arrays of HfC-coated emitters on poly-Si substrate

Nicolaescu

Nagao

Filip

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inMetal coated silicon spike cold-electron emitters show improvement of performance with operation Appl. Phys. Lett. 96, 033501 (2010); 10.1063/1.3291672HfC field emitter array controlled by built-in poly-Si thin film transistor HfC-coated poly-Si field-emission arrays ͑FEAs͒ were produced, and the emission statistics were characterized using a model parameter extraction. The poly-Si, chosen as a substrate, allows the integration of FEAs with control circuits and the scaling up of the fabrication process to larger dimensions, as required by field-emission display applications. The Ar ion sputtering process was used for emitter sharpening, and structures with HfC coatings with different thicknesses were realized. The array field-emission model is built up using equations that describe the electron emission from individual emitters. A general analytical relationship for computing the electric field on the emitter apex was derived. Nonuniform distribution functions within the array for the tip radius and work function are considered. A modified Fowler-Nordheim diagram was used, the emission data current-voltage I-V being represented as ln͑I / V 3 ͒ as a function of 1 / V. A fast and accurate model parameter extraction is performed using a nonlinear extraction algorithm, considered over the entire voltage range for the measurements. The Ar ion sputtering process produces uniform emitters with smooth surfaces, increasing slightly the tip radius. The HfC coating lowers the work function and makes the emitter tips more blunt. An optimum thickness of the HfC layer is shown to exist. The number of active emitters responsible for most of the emission current is derived from the model and compared with direct counts.

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“…[4][5][6] However, its mechanism has not been clarified yet. 1-3 In the transition metal carbides, HfC has the lowest work function.…”

Section: Introductionmentioning

confidence: 99%

Scanning tunneling microscopy observations of hafnium carbide thin films as a field emission material

Sato

Saida

Horikawa

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have already reported superior characteristics of field emission from hafnium carbide (HfC)-coated Si field emission arrays. To clarify the microscopic feature of HfC films related to electron emission, the topograph and local work function (LWF) of the HfC film deposited on Si(100) substrates are examined in an atomic scale by using scanning tunneling microscopy (STM). From the STM/LWF images of the sputtering-cleaned film, it is revealed that the HfC film consists of grains with about 10 nm in size, and that the surface stoichiometry at the grain boundaries becomes carbon rich due to preferential sputtering after higher energy argon ion sputtering.

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Characterization of enhanced field emission from HfC-coated Si emitter arrays through parameter extraction

Cited by 15 publications

References 17 publications

Emission statistics for Si and HfC emitter arrays after residual gas exposure

Emission statistics for Si and HfC emitter arrays after residual gas exposure

Parameter dispersion characterization for arrays of HfC-coated emitters on poly-Si substrate

Scanning tunneling microscopy observations of hafnium carbide thin films as a field emission material

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