Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-thin Barrier Layers in Silicon Microelectronics

Abstract

A detailed characterization of injection properties of epitaxial tunnel-thin calcium fluoride layers is performed. Electrical and optical behavior of Au/CaF 2 /Si capacitors is examined. The results allow for claiming that attained quality of the CaF 2 films is adequate for application as a barrier layer in microelectronics. Fig.1. Left: simulated band diagram of MIS structure with CaF 2 . Right: fragment of Si band structure.