2001
DOI: 10.1016/s0039-6028(01)01172-4
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Characterization of epitaxial growth of Fe(110) on (11−20) sapphire substrates driven by Mo(110) seed layers

Abstract: The molecular beam epitaxy (MBE) growth of bcc Fe(1 1 0) thin ®lms on an Al 2 O 3 (1 1 À2 0) substrate using Mo(1 1 0) seed layers has been investigated. The growth was studied by re¯ection high energy electron diraction (RHEED) in reciprocal space as well as by scanning tunneling microscopy in real space. The relative orientation between the lattices of the Fe (1 1

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Cited by 19 publications
(8 citation statements)
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“…[13][14][15][16][17][18] It turned out that the misfit of about 8.9% between the Fe and the Mo lattices leads to a lattice strain that is released by dislocations ordered in lines. 16 In situ grazing incidence x-ray scattering ͑GIXS͒ and calculations using elasticity theory predict a thickness-dependent uniaxial magnetic anisotropy with a ͓001͔ easy axis due to the relaxing strain. 13 The relevant magnetic anisotropy energies of our Fe͑110͒ films have been investigated by Brillouin lightscattering ͑BLS͒ measurements of spin waves, using appropriate fitting algorithms.…”
Section: Introductionmentioning
confidence: 99%
“…[13][14][15][16][17][18] It turned out that the misfit of about 8.9% between the Fe and the Mo lattices leads to a lattice strain that is released by dislocations ordered in lines. 16 In situ grazing incidence x-ray scattering ͑GIXS͒ and calculations using elasticity theory predict a thickness-dependent uniaxial magnetic anisotropy with a ͓001͔ easy axis due to the relaxing strain. 13 The relevant magnetic anisotropy energies of our Fe͑110͒ films have been investigated by Brillouin lightscattering ͑BLS͒ measurements of spin waves, using appropriate fitting algorithms.…”
Section: Introductionmentioning
confidence: 99%
“…The possibility of a smooth growth of Fe͑110͒ films on Mo͑110͒ seed layers was demonstrated before, 29,30 and the growth mechanism was discussed in detail. 31 In this case smooth epitaxial Fe͑110͒ films were obtained by the growth at room temperature with a subsequent annealing procedure at 500°C. …”
Section: Introductionmentioning
confidence: 99%
“…Epitaxial Fe films were grown on the A-plane of sapphire Al 2 O 3 (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) with a Mo seed layer 10 nm thick by pulsed laser deposition in ultrahigh vacuum. The thickness of Fe (011) films was 60 nm and was controlled with a profilometer.…”
Section: Sample Preparation and Measurementsmentioning
confidence: 99%
“…The thickness of Fe (011) films was 60 nm and was controlled with a profilometer. It was shown in [19] that iron like Mo grows on the A-plane of sapphire along the [011] direction. Direction [1][2][3][4][5][6][7][8][9][10][11] of Fe, belonging to the film plane, is parallel to the Mo [1][2][3][4][5][6][7][8][9][10][11] where α 1 , α 2 , α 3 are direction cosines of the magnetization vector relative to the three perpendicular easy axes of magnetization, K 1 is the constant of cubic anisotropy and K u is the constant of single-axis anisotropy.…”
Section: Sample Preparation and Measurementsmentioning
confidence: 99%