Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials 2006
DOI: 10.7567/ssdm.2006.i-8-4
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Characterization of Epitaxial Silicon Films Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition at Low Temperatures (450-600℃)

Naotaka Tawara1,
Hiromasa Ohmi2,
Yoshikazu Terai3
et al.
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