2002
DOI: 10.1016/s0022-0248(01)01986-8
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Characterization of epitaxial TiO2 films prepared by pulsed laser deposition

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Cited by 58 publications
(50 citation statements)
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“…Many different techniques, such as sputtering [10][11][12][13][14][15], laser ablation [16][17][18], growth from solution [19][20][21][22], chemical vapor deposition [23][24][25][26][27] and molecular beam epitaxy (MBE) [28][29][30] have been employed for thin film TiO 2 deposition. Among these methods, molecular beam epitaxy and metal organic vapor deposition offer the greatest potential for low point defect densities, because of the high purity of the source materials and because they are low energy growth techniques that allow for conditions closer to equilibrium than sputtering or laser ablation.…”
Section: Introductionmentioning
confidence: 99%
“…Many different techniques, such as sputtering [10][11][12][13][14][15], laser ablation [16][17][18], growth from solution [19][20][21][22], chemical vapor deposition [23][24][25][26][27] and molecular beam epitaxy (MBE) [28][29][30] have been employed for thin film TiO 2 deposition. Among these methods, molecular beam epitaxy and metal organic vapor deposition offer the greatest potential for low point defect densities, because of the high purity of the source materials and because they are low energy growth techniques that allow for conditions closer to equilibrium than sputtering or laser ablation.…”
Section: Introductionmentioning
confidence: 99%
“…Meanwhile, today a large amount of information has accumulated on processes induced by thermal energy, delivered to the initial reagents by light mostly in the form of laser radiation. Thus, for example, methods of laser deposition (laser ablation), in which the material of the target is vaporized at the focus of an intense laser beam and is subsequently deposited in the form of colloidal solutions and nanocrystalline films, have been used successfully for the synthesis of TiO 2 [257][258][259][260][261][262], ZnO [263][264][265][266][267][268][269][270][271][272][273], SnO 2 [274], WO 2 [275], FeO [276], Fe 2 O 3 [277], WS 2 [278], CdSe and CdTe [279], Bi 3 Te 2 [280], Se [281], and Si [282,283] nanoparticles and TiO 2 /WO 3 [284] and TiO 2 /Pt [285] nanocomposites.…”
Section: Formation Of Semiconductor Nanoparticles and Change Of Theirmentioning
confidence: 99%
“…As known, control at the nano-scale of material structure during the synthesis process offers the possibility of designing high quality devices with improved and pre-defined performances. Nano-crystalline TiO 2 thin films have been prepared up to now by a large variety of growth techniques, such as metal-organic chemical vapor deposition (MOCVD) [22,23], reactive magnetron sputtering [24,25], sol-gel chemistry [26], filtered cathodic vacuum arc [27] and pulsed laser deposition (PLD) [28][29][30][31][32][33][34][35][36], and PLD has important advantages over other deposition methods. Through the appropriate adjustments of process parameters such as laser fluence, number of laser pulses, ambient reactive gas pressure and substrate temperature PLD allows for the precise control of the growth process and, thus, the synthesized thin films' crystalline structure, stoichiometry, thickness, as well as their adherence to the substrate surface [37][38][39], However, in general the TiO 2 films prepared by PLD mainly consisted of mixtures of crystal phases [30,[33][34][35], It was shown that the formation of pure, monophasic TiO 2 thin films of either rutile or anatase structure requires, besides the adjustment of the process parameters, special substrate materials ensuring small in-plane lattice mismatch at the films-substrate interface [28,36].…”
Section: Introductionmentioning
confidence: 99%