Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence

Han, A.C.; Wójtowicz, M.; Block, Thomas; Zhang, X.; Chin, T. P.; Cavus, A.; Oki, A.K.; Streit, D.C.

doi:10.1063/1.371669

Cited by 8 publications

(3 citation statements)

References 15 publications

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“…Very few reports are available on the liquid-liquid interface self-assembly of gold nanorods, which is one of the most efficient structures for SERS applications. [27][28][29][30][31] The challenges associated with the interfacial assembly of gold nanorod are mainly related to the destabilization and partial aggregation during surfactant exchange. 19,32 Cheng et al used sequential ''grafting to'' (ligand exchange) and ''grafting from'' (surface initiated atom transfer radical polymerization) reactions to synthesize amphiphilic gold nanorods with mixed polymer brushes that can spontaneously assemble into two-dimensional arrays at oil/water interfaces.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of transparent SERS platform via interface self-assembly of gold nanorods and gel trapping technique for on-site real time detection

Lin

Han

Lou

et al. 2015

Phys. Chem. Chem. Phys.

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A transparent SERS platform was fabricated via the gel-trapping method coupled with a liquid/liquid interface self-assembly technique. We employed gold nanorods as the building blocks for interface self-assembly because of their strong localized surface plasmons upon excitation by infrared radiation. Based on a "top cover" configuration, this transparent SERS platform endows high signal reproducibility for directly detecting liquid samples by confining the sample droplet into a regular shape. The Au NR PDMS platform was able to directly detect crystal violet in aqueous solutions down to 10 ppb level with high enhancement factor (0.87 × 10(5)) and signal uniformity (RSD = 3.9%). Furthermore, SERS-based anti-fungal agent detection on a fish scale was demonstrated by simply covering the fish scale with a tailored GNRs PDMS film. The experimental results clearly show that the Au NR PDMS SERS platform has great potential for on-site real time detection of contaminants in water as well as on curved surfaces.

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Section: Introductionmentioning

confidence: 99%

Fabrication of transparent SERS platform via interface self-assembly of gold nanorods and gel trapping technique for on-site real time detection

Lin

Han

Lou

et al. 2015

Phys. Chem. Chem. Phys.

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“…For example, Shen et al 3) estimated the surface Fermi levels in GaAs and AlGaAs from the FK oscillations. In recent years, the measurements of FK oscillations have been applied to the characterization of epitaxial layer structures of heterojunction bipolar transistors, [4][5][6][7] high electron mobility transistors [8][9][10][11][12] and so on. In the analysis of the electric field strength, we usually plot the positions of the extrema of the FK oscillations in the asymptotic region from the critical point energy according to the following equation that is derived from the asymptotic form of an electro-optic function: 13) h…”

Section: Introductionmentioning

confidence: 99%

Interference Effect on the Phase of Franz–Keldysh Oscillations in GaAs/AlGaAs Heterostructures

Takeuchi

Yamamoto

Hattori

et al. 2003

Jpn. J. Appl. Phys.

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We have studied photoreflectance spectra of GaAs/Al 0:3 Ga 0:7 As heterostructures from the viewpoint of the phase of Franz-Keldysh (FK) oscillations. The phase of the FK oscillations originating from the GaAs buffer layer shifts with the change of the Al 0:3 Ga 0:7 As-layer thickness, while the period does not vary. The FK-oscillation phase does not depend on the pump power, which suggests that the phase shift is not caused by a difference in the magnitude of modulation. We propose a calculation model for FK oscillations that includes the interference of probe light. Photoreflectance spectra calculated on the basis of this model are compared with the measured spectra. We conclude that mixing of the real and imaginary parts of a modulated dielectric function, which is caused by the probe-light interference, gives rise to the phase shift of the FK oscillations. We also derive a novel analysis method for a linear plot of the extremum positions of FK oscillations based on the above line-shape model. The present method remarkably reduces ambiguity in the estimation of band-gap energy that is considerable in a conventional analysis.

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“…Since the emitter-base junction is a MBE-grown AlGaAs-GaAs heterostructure, we would expect to exhibit values of ␤ comparable to those demonstrated in AlGaAs-GaAs HBTs (␤ ϳ20-100 for similar emitter-base structures and device sizes͒. 10,11 Our earlier studies have shown that wafer fusion at elevated temperatures promotes the diffusion of dopants across interfaces ͑to be published elsewhere͒. This ''cross diffusion'' could in turn reduce both nB and D nB , leading to a reduced value of ␤.…”

mentioning

confidence: 90%

Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor

Estrada

Xing

Stonas

et al. 2003

Applied Physics Letters

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We describe an n-AlGaAs/p-GaAs/n-GaN heterojunction bipolar transistor, formed via wafer fusion of a p-GaAs base to an n-GaN collector. Wafer fusion was carried out at 750 °C for 1 h. Devices utilized a thick base (0.15 μm) and exhibited limited common-emitter current gain (0.2–0.5) at an output current density of ∼100 A/cm2. Devices were operated to VCE greater than 20 V, with a low VCE offset (1 V). Improvements in both device structure and wafer fusion conditions should provide further improvements in device performance.

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Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence

Cited by 8 publications

References 15 publications

Fabrication of transparent SERS platform via interface self-assembly of gold nanorods and gel trapping technique for on-site real time detection

Fabrication of transparent SERS platform via interface self-assembly of gold nanorods and gel trapping technique for on-site real time detection

Interference Effect on the Phase of Franz–Keldysh Oscillations in GaAs/AlGaAs Heterostructures

Wafer-fused AlGaAs/GaAs/GaN heterojunction bipolar transistor

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