Characterization of GaN‐based lateral polarity heterostructures

Abstract

GaN‐based lateral polarity heterostructures (LPH) were grown on sapphire substrates using molecular beam epitaxy. The LPH samples consist of periodical N‐face (000‐1) (grown directly on Al2O3) and Ga‐face (0001) (grown on a AlN bufferlayer) GaN stripes. The GaN‐based LPH have been characterized using surface sensitive techniques. The GaN‐based LPH consist of smooth Ga‐face (0.4 nm RMS) and N‐face regions of higher roughness (7 nm RMS) with small (<70 nm as measured by atomic force microscopy) and well‐defined inversion domain boundary regions (IDBR). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)