Characterization of GaN Based UV-VUV Detectors in the Range 3.4-25 eV by Using Synchrotron Radiation

Motogaito, Atsushi; Ohta, Keiichi; Hiramatsu, Kazumasa; Ohuchi, Youichiro; Tadatomo, Kazuyuki; Hamamura, Yutaka; Fukui, Kiichi

doi:10.1002/1521-396x(200111)188:1<337::aid-pssa337>3.0.co;2-h

Cited by 21 publications

(17 citation statements)

References 12 publications

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“…Device parameters such as the substrate doping concentration, the thickness of the top contact, the semiconductor thickness, the absorption coefficient α, the refractive index n, and the extinction coefficient k were from the literature [24]. The spectral response (SR) is given by the formula:…”

Section: Resultsmentioning

confidence: 99%

Influence of polyethylene glycol-300 addition on nanostructured lead sulfide thin films properties

Kaci

Keffous

Trari

et al. 2010

Optics Communications

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Section: Resultsmentioning

confidence: 99%

Influence of polyethylene glycol-300 addition on nanostructured lead sulfide thin films properties

Kaci

Keffous

Trari

et al. 2010

Optics Communications

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“…These layers are grown by metalorganic vapor phase epitaxy (MOVPE). The Au/Ni Schottky contacts with a comb-shaped electrode [5] and that with a transparent electrode [6] are formed on i-GaN. Figures 1 show the schematic diagrams of device structures.…”

Section: Methodsmentioning

confidence: 99%

“…UV detectors are illuminated with the monochromatic light, which is between hν=2.2 eV (λ=564 nm) and hν=25 eV (λ=50 nm). The detail of measurement was described previously [6]. When light is illuminated in the samples, the appearance of photoemission is considered.…”

Section: Methodsmentioning

confidence: 99%

“…However, light sensitivity often deteriorates due to radiation damage in the vacuum ultraviolet (VUV) region. To solve this problem, several groups have reported on GaN-or AlGaN-based UV detectors such as photoconductor [1], the Schottky type [2][3][4][5][6], the Schottky-based metal-semiconductor-metal type [7], p-n or p-i-n type [8,9] have been reported. They have good responsivity from 250 to 360 nm and clear cut-off characteristics at a cut-off wavelength of λ c =360 nm.…”

Section: Introductionmentioning

confidence: 99%

“…However, there were few reports on responsivity spectra in VUV region [5,6]. In this paper, characterization of Schottky barrier UV detectors with a comb-shaped electrode and a transparent electrode on i/n-GaN epitaxial layers over sapphire substrates in the VUV region using synchrotron radiation are carried out and then the effect of Schottky electrode structure is described.…”

Section: Introductionmentioning

confidence: 99%

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Effects of the Schottky electrode structure in GaN based UV-VUV (50-360 nm) photodetector

et al. 2001

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(Al,In,Ga)N‐based photodetectors. Some materials issues

Muñoz

2007

Physica Status Solidi (b)

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www.pss-b.com filters are needed to stop low energy photons (VIS and infrared light), degradation is produced by UV photons (shorter device lifetime), efficiency lowers, dark current increases markedly with temperature, etc. The development of higher band gap III-arsenides or III-phosphides for UV photodetection did not progress substantially. On the other hand, for high sensitivity UV applications, PMT are needed, being bulky and requering a high-voltage power supply [1][2][3].To avoid the use of filters, to increase efficiency, to lower noise and dark current specially above room temperature, and to achieve visible-blind operation, UV detectors based on wide band gap semiconductors have been studied during the last decade. Thin film synthetic diamond detectors (E g = 5.4 eV, 227 nm, direct gap), were developed and commercialised mainly as polycrystalline photoconductor devices. SiC p-n junction PD (4H-SiC, E g = 3.26 eV; 6H-SiC, E g = 3 eV, indirect gap), have been also available. However, the turning point to make visible-blind UV detectors an appealing reality, to open really new possibilities for UV detection, has been the development of (Al,In,Ga)N semiconductors. The possibility of selecting the cut-off wavelength by adjusting the mole fraction of the ternary or quaternary alloys is unique, so far not being proven by any other wide-band-gap semiconductor family [2].III-nitrides are direct band gap materials, with GaN showing its absorption edge at 360 nm (E g = 3.44 eV) and at 200 nm for AlN (E g = 6.2 eV), and with the ability to form heterojunctions and to withstand high temperatures. Even the 400 nm UV frontier can be reached using (In,Ga)N alloys (band gap assigned today to InN is 0.7 eV). This tunability of the detection edge by just varying the Al(In) mole fraction, and the fact that (Al,In,Ga)N technology is already fully commercial for light emitting diodes, laser diodes (LEDs and LDs, respectively) [4], and it has just started for high electron mobility transistors (HEMTs), are very important points that have made (Al,In,Ga)N alloys the most adequate solution for UV detection in many applications. Besides, the high chemical and thermal stability of GaN, GaN-based detectors are also of interest for high photon energy detection (e.g. VUV and X-rays) and even for high energy particle detection [5].The photoconductive properties of GaN were studied by Pankove and Berkeyheiser in 1974 [6], and in about fifteen years of III-nitrides technology, the first GaN UV photoconductive detectors were reported by Khan in 1992 [7]. Since then, practically all types of PD structures have been developed, directly linked to advances in GaN and AlGaN epitaxial growth, and to progresses in p-type doping and in ohmic and Schottky contact technology. Trying to give a perspective of the developments, we may consider an initial exploratory phase (a proof of concept, first generation of UV detectors, VIS blind), just trying to confirm that GaN and AlGaN PDs (with low-medium Al mole fractions) were feasible. Later, a second ...

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Characterization of GaN Based UV-VUV Detectors in the Range 3.4-25 eV by Using Synchrotron Radiation

Cited by 21 publications

References 12 publications

Influence of polyethylene glycol-300 addition on nanostructured lead sulfide thin films properties

Influence of polyethylene glycol-300 addition on nanostructured lead sulfide thin films properties

Effects of the Schottky electrode structure in GaN based UV-VUV (50-360 nm) photodetector

(Al,In,Ga)N‐based photodetectors. Some materials issues

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