Characterization of GaN films grown on hafnium foils by pulsed sputtering deposition

Kim, Hyeryun; Ohta, Jitsuo; Ueno, K.; Kobayashi, Atsushi; Fujioka, Hiroshi

doi:10.1002/pssa.201700244

Cited by 3 publications

(4 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, growth of GaN on Hf is challenging because Hf reacts with Ga to form HfN at high temperatures [150]. This intermetallic compound layer at the GaN/Hf interface was found to be responsible for zinc-blende phase formation [151]. The films grown by PSD at 720 °C directly on the Hf surface contained both wurtzite (65%) and zinc-blende (35%) phases [151].…”

Section: Iii-nitrides Grown By Sputtering On Amorphous and Flexible S...mentioning

confidence: 99%

“…This intermetallic compound layer at the GaN/Hf interface was found to be responsible for zinc-blende phase formation [151]. The films grown by PSD at 720 °C directly on the Hf surface contained both wurtzite (65%) and zinc-blende (35%) phases [151]. As in the case of the graphene/SiO 2 templates discussed above, AlN interlayers inserted between GaN and Hf were used to prevent the interfacial reaction and obtain highly c-axis-oriented GaN films.…”

Section: Iii-nitrides Grown By Sputtering On Amorphous and Flexible S...mentioning

confidence: 99%

“…As in the case of the graphene/SiO 2 templates discussed above, AlN interlayers inserted between GaN and Hf were used to prevent the interfacial reaction and obtain highly c-axis-oriented GaN films. In addition, the surface oxidation of AlN interlayers resulted in desirable Ga-polarity of the GaN films on Hf foils [151]. The residual carrier concentration in the Ga-polar GaN films on Hf was as low as 3.2×10 16 cm −3 , indicating that p-and n-type conductivities can be achieved by proper doping.…”

Section: Iii-nitrides Grown By Sputtering On Amorphous and Flexible S...mentioning

confidence: 99%

See 2 more Smart Citations

Emergence of high quality sputtered III-nitride semiconductors and devices

Izyumskaya¹,

Avrutin²,

Ding³

et al. 2019

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This article provides an overview of recent development of sputtering method for high-quality III-nitride semiconductor materials and devices. Being a mature deposition technique widely employed in semiconductor industry, sputtering offers many advantages such as low cost, relatively simple equipment, non-toxic raw materials, low process temperatures, high deposition rates, sharp interfaces, and possibility of deposition on large-size substrates, including amorphous and flexible varieties. This review covers two major research directions: (1) ex situ sputtered AlN buffers to be used for subsequent growth of GaN-based structures by conventional techniques, such as metal-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), or molecular beam epitaxy (MBE), and (2) deposition of the entire III-nitride layered stacks and device structures by sputtering. Replacing conventional in situ GaN or AlN buffer layers with ex situ sputtered AlN buffers for MOCVD, HVPE, or MBE growth of IIInitride films on sapphire and silicon substrates results in the improved crystal quality through reduction in dislocation density and residual strain. Extensive efforts in the field of sputter deposition of III-nitrides resulted in crystalline quality of sputtered III-nitride films compatible with that of MOCVD and MBE grown layers despite the lower temperatures used in sputtering. For example, sputtering techniques made it possible to achieve GaN layers heavily doped with Si and Ge to electron concentrations in mid-10 20 cm −3 range with mobilities exceeding 100 cm 2 V −1 s −1 , resulting in conductivities as high as those of benchmark transparent conducting oxides such as indium tin oxide (ITO). For moderate levels of doping with Si, mobilities comparable to state-of-the-art MOCVD-grown material have been demonstrated (up to ∼1000 cm 2 V −1 s −1 ). The first promising results have been reported for devices (light emitters and field effect transistors) entirely produced by sputtering.

show abstract

Section: Iii-nitrides Grown By Sputtering On Amorphous and Flexible S...mentioning

confidence: 99%

Section: Iii-nitrides Grown By Sputtering On Amorphous and Flexible S...mentioning

confidence: 99%

Section: Iii-nitrides Grown By Sputtering On Amorphous and Flexible S...mentioning

confidence: 99%

See 1 more Smart Citation

Emergence of high quality sputtered III-nitride semiconductors and devices

Izyumskaya¹,

Avrutin²,

Ding³

et al. 2019

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…Recently, Pulsed Sputter Deposition (PSD) has been promoted to be able to produce InGaN/GaN LEDs on the metal, amorphous materials, and temperature-sensitive substrates. 1,2 Sputtering fulfills all the advantages mentioned above: lower growth temperatures might be possible, since the atom and molecular species have quite high kinetic energy themselves. Even room temperature growth has been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Defect generation by nitrogen during pulsed sputter deposition of GaN

Steib

Remmele

Gülink

et al. 2018

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

High quality AlN film grown on a nano-concave-circle patterned Si substrate with an AlN seed layer

Shen

Yang

Liu

et al. 2020

Applied Physics Letters

View full text Add to dashboard Cite

We have investigated the growth of AlN films on hexagonal nano-concave-circle patterned Si substrates using metal–organic chemical vapor deposition. By depositing a thin AlN seed layer on the Si substrate before the pattern process, a high quality AlN film with a thickness of 2 μm has been obtained. The full width at half maximum values of X-ray diffraction rocking curves are as low as 409 and 677 arc sec for AlN (002) and (102) planes, respectively. Further experimental results indicate that the AlN seed layer can suppress the misorientation of the adjacent grains, as revealed by the lower twist and tilt angles of the mosaic structure, and thus only a few dislocations generated during the grain coalescence. In addition, the migration of Al adatoms is enhanced on the Al terminated surface of the AlN seed layer, which accelerates the coalescence process. All these improvements are attributed to the lower binding energy and diffusion barrier for Al adatoms on the Al terminated surface than that on the Si surface. Our results demonstrate an effective approach to obtain high quality AlN films for high performance ultraviolet light-emitting diodes on the Si substrate.

show abstract

Characterization of GaN films grown on hafnium foils by pulsed sputtering deposition

Cited by 3 publications

References 26 publications

Emergence of high quality sputtered III-nitride semiconductors and devices

Emergence of high quality sputtered III-nitride semiconductors and devices

Defect generation by nitrogen during pulsed sputter deposition of GaN

High quality AlN film grown on a nano-concave-circle patterned Si substrate with an AlN seed layer

Contact Info

Product

Resources

About