Proceedings of the 13th International Symposium on Power Semiconductor Devices &Amp; ICs. IPSD '01 (IEEE Cat. No.01CH37216)
DOI: 10.1109/ispsd.2001.934645
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Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETs using the charge-pumping technique

G. Dolny
1
,
N. Gollagunta
2
,
Samia A. Suliman3
et al.
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