Characterization of Geiger mode avalanche photodiodes for fluorescence decay measurements

Jackson, John Carlton; Phelan, Don; Morrison, Alan P.; Redfern, R. M.; Mathewson, A.

doi:10.1117/12.467676

Cited by 27 publications

(14 citation statements)

References 19 publications

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“…Eqn. (1) shows that the band to band tunneling current increases rapidly with the reverse bias. To obtain a low tunneling probability, the effective mass and bandgap should be large and the electric field should be small.…”

Section: Discussionmentioning

confidence: 99%

“…The former provides higher sensitivity than p-i-n photodiodes in high bit rate optical communication systems while the latter has been used in quantum key distribution for secure communications [1]. It is well known that the impact ionization process is strongly dependent on temperature therefore a biasing circuit to maintain a constant gain is necessary to achieve reproducible performance.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

AlAsSb Avalanche Photodiodes With a Sub-mV/K Temperature Coefficient of Breakdown Voltage

Xie

Tan

2011

IEEE J. Quantum Electron.

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has been with the Department of Electronic and Electrical Engineering, University of Sheffield, where he is currently a Reader. He has extensive experience in characterization and modeling of high speed low noise avalanche photodiodes and phototransistors. His current research interests include single photon avalanche diodes, mid-infrared photodiodes, quantum dot infrared detectors, X-ray detectors and ultrahigh speed avalanche photodiodes and phototransistors.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

AlAsSb Avalanche Photodiodes With a Sub-mV/K Temperature Coefficient of Breakdown Voltage

Xie

Tan

2011

IEEE J. Quantum Electron.

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“…Their performance is competitive with commercial devices, with timing jitters of 190 ps and quantum efficiencies of 43% measured on samples with no antireflection coating [10]. The flexibility of the manufacturing process allows for spatially separated arrays [11] and the integration of additional electronics on the same wafer [13] through isolated siliconon-insulator fabrication. Since all electrical contacts are on the one surface, it is also possible to flip-chip bump-bond the devices to optical surfaces or other materials [8].…”

Section: The Devicesmentioning

confidence: 98%

Characterization of novel active area silicon avalanche photodiodes operating in the Geiger mode

Morrison¹,

Mathewson²,

Rarity³

et al. 2004

Journal of Modern Optics

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We present a method for characterizing avalanche photodiode (APD) photon-counting detector efficiency as a function of active area. Various shallow-junction silicon APDs having a novel active area were manufactured and tested. We show that cylindrical and checkquerboard-shaped active areas have dark counts two orders of magnitude lower than standard circular devices with an equivalent active area. A parallel implementation of small active areas creates gettering sites for defects to migrate to, which is believed to create relatively defect-free active areas as the perimeter-to-area ratio is increased. However, a compromise between a large perimeter-to-area ratio and a structure useful for practical applications must be considered to optimize the detector.

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“…Recently, timecorrelated techniques have become widely used in imaging of molecular processes in physics and the life sciences. Examples of such trend are in fluorescence decay measurements [1], Fluorescence Lifetime Imaging and Fluorescence Correlation Spectroscopy [2], [3], Förster Resonance Energy Transfer [4], flow cytometry, etc.…”

Section: Introductionmentioning

confidence: 99%

A CMOS 64×48 Single Photon Avalanche Diode Array with Event-Driven Readout

Niclass

Migliore

Charbon

2006

2006 Proceedings of the 32nd European Solid-State Circuits Conference

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Abstract-This paper presents a CMOS array of 64 48 pixels capable of detecting single photons with timing accuracies better than 80ps. Upon photon arrival, a digital pulse is generated and routed by an event-driven digital readout scheme to a specific location for further processing. This method allows non-sequential row-wise and simultaneous column-wise detection while preserving photon arrival timing information. The readout scheme is scalable and it is shown to have minimal impact on timing accuracy. Time-correlated fluorescence spectroscopy and optical rangefinders are among the target applications for this technology.

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Characterization of Geiger mode avalanche photodiodes for fluorescence decay measurements

Cited by 27 publications

References 19 publications

AlAsSb Avalanche Photodiodes With a Sub-mV/K Temperature Coefficient of Breakdown Voltage

AlAsSb Avalanche Photodiodes With a Sub-mV/K Temperature Coefficient of Breakdown Voltage

Characterization of novel active area silicon avalanche photodiodes operating in the Geiger mode

A CMOS 64×48 Single Photon Avalanche Diode Array with Event-Driven Readout

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