Characterization of Germanium Dry Etching Using Inductively Coupled BCl3 Plasma

Kim, Taek Sung; Yang, Ha Yong; Choi, Sung Chul; Jeong, T. S.; Kang, Sukil; Shim, Kyu–Hwan

doi:10.3365/eml.2009.03.043

Cited by 7 publications

(3 citation statements)

References 11 publications

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“…Besides fin morphology, other factors such as etch rate, etch selectivity and process compatibility are also important for device performance and process integration and should be comprehensively considered. Comparison of F-based and Clbased etching are shown in table 1, together with reported results [17,19]. The sidewall steepness of different etchants is mainly 85 °∼87°, suggesting an ideal fin profile.…”

Section: Resultsmentioning

confidence: 69%

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Nanoscale Ge fin etching using F- and Cl-based etchants for Ge-based multi-gate devices

Zhang¹,

An²,

Li³

et al. 2018

Semicond. Sci. Technol.

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In this paper, nanoscale germanium (Ge) fin etching with inductively coupled plasma equipment with SF 6 /CHF 3 /Ar and Cl 2 /BCl 3 /Ar gas mixes are experimentally demonstrated. The impact of the gas ratio on etching induced Ge surface flatness, etch rate and sidewall steepness are comprehensively investigated and compared for these two kinds of etchants and the optimized gas ratio is provided. By using silicon oxide as a hard mask, nanoscale Ge fin with a flat surface and sharp sidewall is experimentally illustrated, which indicates great potential for use in nanoscale Ge-based multi-gate MOSFETs.

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Section: Resultsmentioning

confidence: 69%

“…Under strong physical bombardment and low Cl 2 flow rate, the etch rate is mainly determined by the chemical reaction between Cl 2 and Ge. For BCl 3 , it may be ionized into B-Cl and Cl radicals [17]. B-Cl radical passivates the Ge surface, suppressing the etching process of Ge [18].…”

Section: Resultsmentioning

confidence: 99%

Nanoscale Ge fin etching using F- and Cl-based etchants for Ge-based multi-gate devices

Zhang¹,

An²,

Li³

et al. 2018

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The HR-TEM, XRD and Raman analyses, together with the differences observed with and without the HF pretreatment and the use of Au NPs, hint at a possible picture of the ANCs growth based on the following facts: 1) local substrate etching is observed concomitantly with ANCs formation; 2) both the HF pretreatment and Au NPs facilitate the growth of the ANCs. Etching of the Ge substrate is likely induced by the Clions [41] , [42] , [43] resulting from the molecular dissociation of the SbCl3 precursor.…”

Section: Resultsmentioning

confidence: 99%