Characterization of Graphene TFET for Subterahertz Oscillator

Mao, Xurui; Huang, Biying; Zhang, Xu; Sun, Niefeng; Cheng, Chuantong; Gan, Sheng; Geng, Zhaoxin; Chen, Hongda

doi:10.1109/ted.2016.2569594

Cited by 3 publications

(6 citation statements)

References 38 publications

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“…The source and drain are connected via a bias tee to eliminate the influence of AC response at the source and drain. Using Sensale-Rodriguez's model [12] and the previous work of our research [11], the AC distribution model can be simplified as an active lossy transmissionline shown in Fig. 2(b).…”

Section: Distributed Parameter Model Of Photo-controlled Quantum Cmentioning

confidence: 99%

“…In our model, we ignore the parameters g 3 and g 4 by considering g 3 to be much smaller than g 1 , meanwhile, g 4 to be much smaller than g 2 respectively [32], [33]. Subsequently, we can define the parameters of distributed model as [11], [12]:…”

Section: Distributed Parameter Model Of Photo-controlled Quantum Cmentioning

confidence: 99%

“…If the band diagrams are unaligned, the resonating tunneling mechanism of the GIG structure will reduce and show positive differential conductance (PDC) or negative differential conductance (NDC) characteristics. Due to the strong nonlinearity of the multivalued conductivity characteristic near the resonance tunneling region, the GIG structure can be used in NDC oscillator [11] and amplifier [12]. For application in oscillators, the NDC is used to offset resistance to realize zero impedance, and the oscillation frequency only depends on the capacitors and inductance of overall structure [13].…”

Section: Introductionmentioning

confidence: 99%

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Photo-Controlled Quantum Capacitors in Gated Graphene-Insulator-Graphene for Terahertz Frequency and Phase Modulations

Mao

Gu³

et al. 2020

IEEE J. Electron Devices Soc.

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This paper proposes a theoretical model of photo-controlled quantum capacitors in double-gated graphene-insulator-graphene (DGGIG) structure for terahertz (THz) frequency and phase modulations. In the model, the current-voltage characteristics of each segment of the DGGIG structure are controlled by different gate voltages. Using the different voltages, the DGGIG structure can be used to either generate plasma oscillation waves or shift phase in the terahertz band. Not only has the DGGIG structure various electrical properties, but also the optical properties are also excellent. Photoexcitation alters carrier concentration in DGGIG channel, and thus causes the change of the quantum capacitors. We propose a photo-controlled quantum capacitor model to quantify this phenomenon. The model shows that the quantum capacitors and photoexcitation have a sublinear dependence. An example of a device based on the model is given to describe the application of photo-controlled quantum capacitors in terahertz frequency and phase modulations. The modelled device shows that photoexcitation can change the frequency and phase of the plasma oscillation waves. INDEX TERMS Graphene-insulator-graphene, phase modulation, frequency modulation, plasma oscillation waves, photo-controlled quantum capacitors, terahertz.

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Section: Distributed Parameter Model Of Photo-controlled Quantum Cmentioning

confidence: 99%

Section: Distributed Parameter Model Of Photo-controlled Quantum Cmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Photo-Controlled Quantum Capacitors in Gated Graphene-Insulator-Graphene for Terahertz Frequency and Phase Modulations

Mao

Gu³

et al. 2020

IEEE J. Electron Devices Soc.

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“…De igual forma ocurre en (Mao, et al, 2016(Mao, et al, ) y (W., et al, 2017 con la implementación de grafeno para lograr osciladores GTFET (túnel de grafeno FET) en donde se analizan parámetros clave para el dispositivo tales como la frecuencia, la potencia de salida, funcionamiento, oscilación máxima, potencia máxima, relación entre frecuencia y potencia y rendimiento, y todo encaminado a lograr una comunicación eficaz.…”

Section: Aplicaciones En Las Nanocomunicacionesunclassified

La visión de la nanotecnología para las radiocomunicaciones en los próximos años. Una perspectiva desde la academia

García

Betancur

2017

Ingeniería y Región

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La Visión de la Nanotecnología para las Radiocomunicaciones en los próximos años.Una perspectiva desde la Academia. The Vision of Nanotechnology for the Radiocommunications in the coming years. A perspective from the Academy.Andrés Felipe García 1 , L. Betancur 2 ResumenEn los últimos años, la nanotecnología ha marcado un hito en la evolución de las comunicaciones, lo que ha permitido el desarrollo de nuevas aplicaciones y la estandarización de nuevos materiales en una escala nanométrica llamada nanomateriales. Algunos de ellos son el grafeno y sus derivados como los nanotubos de carbono y algunos compuestos como los metamateriales cuyas propiedades y características de tipo electrónico y físico son totalmente compatibles, permitiendo una fusión fácil con las telecomunicaciones. Y es precisamente lo que se pretende mediante este artículo; proporcionar una perspectiva desde la academia para identificar algunos tipos de nanomateriales que nos planteamos algunas preguntas como ¿qué tipo de materiales son?, ¿qué propiedades tienen?, ¿qué clasificación poseen?, ¿cuáles son algunas de las aplicaciones más importantes en el campo de las telecomunicaciones?, y ¿qué desarrollos y aplicaciones hay actualmente? Así, entramos explorando las nanocomunicaciones.Palabras clave: Nanotecnología; nanocomunicaciones; nanoreceptor; grafeno; nanoantennas. AbstractIn recent years, nanotechnology has marked a milestone in the communications evolution, which has allowed the development of new applications and standardization of new materials to a nanometer scale called nanomaterials. Some of them are the graphene and its derivatives as carbon nanotubes and some compounds as the metamaterials whose properties and characteristics of electronic and physical type are fully compatible, allowing easy merging with telecommunications. And it is precisely what is intended by this article: provide a perspective from the academy to identify some kinds of nanomaterials and we resolve some questions like ¿what kind of materials are? ¿what properties do it have? ¿what classification has it? ¿what are some of the most important applications in the field of telecommunications? and ¿what developments are there currently. Thus, we enter exploring the nanocommunications.

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“…1 Plasma-wave electronics material is especially promising material systems for the development of terahertz applications, 2 including amplifier, 3 detector, 4 modulator, 5 and oscillator. 6 On the other hand, resonant tunnelling diodes (RTDs) are a kind of quantum effect devices with excellent performance in negative differential conductance (NDC) and high-speed. 7 The oscillator based on transmission line loaded RTD is one of the most potential candidate devices for terahertz oscillators.…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of terahertz active transmission line oscillator based on RTD-gated HEMT

et al. 2018

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In this paper, a new kind of terahertz oscillator is presented using plasma wave excitation in a resonant tunnel diode (RTD) gated high electron mobility transistor (HEMT). The plasma wave arising from the RTD-gated HEMT is equivalent to active transmission lines and induces negative differential conductance (NDC) of the oscillator. The proposed RTD-gated HEMT oscillator is more compact and has higher oscillation frequency than the transmission line loaded traditional RTD oscillator duo to plasma wave effect. This paper analyses and calculates the oscillation conditions, the relationships between device structures, oscillation frequency and the output power of the oscillator. The presented work may provide a new concept for fabricating terahertz oscillator.

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Characterization of Graphene TFET for Subterahertz Oscillator

Cited by 3 publications

References 38 publications

Photo-Controlled Quantum Capacitors in Gated Graphene-Insulator-Graphene for Terahertz Frequency and Phase Modulations

Photo-Controlled Quantum Capacitors in Gated Graphene-Insulator-Graphene for Terahertz Frequency and Phase Modulations

La visión de la nanotecnología para las radiocomunicaciones en los próximos años. Una perspectiva desde la academia

Theoretical study of terahertz active transmission line oscillator based on RTD-gated HEMT

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