Characterization of HfSiON gate dielectrics using monoenergetic positron beams

Uedono, Akira; Ikeuchi, K.; Otsuka, Toshihiko; Shiraishi, Kenji; Yamabe, Kikuo; Miyazaki, Seiichi; Umezawa, Naoto; Hamid, A. S.; Chikyow, Toyohiro; Muramatsu, Tomo; Suzuki, Ryoichi; Inumiya, S.; Kamiyama, Satoshi; Akasaka, Y.; Nara, Yasuo; Yamada, Keiichi

doi:10.1063/1.2178657

Cited by 25 publications

(23 citation statements)

References 28 publications

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“…Using the positron annihilation technique and X-ray photoelectron spectroscopy (XPS), Uedono et al [10] reported the effect of nitrogen incorporation in 5 nm thick HfSiON x films deposited on Si substrates. They reported that the average size of open spaces increased as x increased, and this is mainly due to the increase in the density of Si-N bonds.…”

Section: Resultsmentioning

confidence: 99%

“…Positron annihilation is an established technique for investigating vacancytype defects and open spaces (pores) in crystalline and amorphous materials [6,7]. Using this technique, insulators deposited on semiconductor substrates were successfully characterized [8][9][10]. In the present study, we used mono-energetic positron beams to study the annealing behaviours of open spaces in thin Al 2 O 3 films fabricated by ALD and a reactive sputtering technique.…”

Section: Introductionmentioning

confidence: 99%

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Annealing Behaviours of Open Spaces in Thin Al₂O₃ Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams

et al. 2020

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Open spaces in amorphous Al2O3 films fabricated by atomic layer deposition and in AlONx deposited by a reactive sputtering technique were probed by using monoenergetic positron beams. In these films, open spaces with three different sizes were found to coexist. The mean size and the concentration of open spaces were decreased by annealing at 800 • C in N2 atmosphere, which was associated with rearrangements of the amorphous network in the films and their crystallization. Nitrogen incorporation into Al2O3 suppressed the shrinkage of network structures due to the annealing, which was attributed to the formation of a stable network through the introduction of Al-N bonding. For Al2O3 deposited on GaN, the temperature treatment above 800 • C led to the introduction of vacancytype defects in the GaN substrate. This fact suggests that the change in the network structure of Al2O3 enhances chemical instability at the Al2O3/GaN interface and the out-diffusion of atoms from the substrate.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Annealing Behaviours of Open Spaces in Thin Al₂O₃ Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams

et al. 2020

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“…Using a monoenergetic positron beam, the Doppler broadening spectra of the annihilation radiation were measured with a Ge detector as a function of the incident positron energy E [6,7]. Doppler broadening spectra produced by the annihilation of positrons in vacancy-type defects were theoretically calculated using our in-house QMAS (Quantum MAterials Simulator) code, which uses valence-electron wavefunctions determined by the projector augmented-wave (PAW) method [12,13].…”

Section: Methodsmentioning

confidence: 99%

“…Although the benefits of nitridation are clear, only limited information regarding its effects on atomic configurations is available. Point defects or open spaces in metal oxides have been successfully investigated by applying positron annihilation [6][7][8], and the results show that a positron is a useful probe for studying vacancy-type defects in such materials. In our study, we applied this technique to investigate the vacancies introduced into SrTiO 3 through metal deposition and to study the impact of nitridation on open volumes in HfSiO x .…”

Section: Introductionmentioning

confidence: 98%

Defect characterization of crystalline metal oxides and high-k films by means of positron annihilation

Uedono

Ishibashi

Oshima

et al. 2010

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

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Point defects introduced by homoepitaxial growth of thin films on SrTiO 3 substrates were studied by means of positron annihilation. The SrTiO 3 films were grown by molecular-beam epitaxy (MBE) without using an oxidant. The line-shape parameter S was found to be increased by the growth of the film, which was attributed to the diffusion of oxygen from the substrate into the film, and the resultant introduction of oxygen vacancies. The impact of nitridation on open volumes in thin HfSiO x films fabricated on Si by atomic layer deposition was also studied. After plasma nitridation, the size of open volumes in the films decreased. An expansion of open volumes, however, was observed after post-nitridation annealing. The change in the size of open volumes was attributed to the trapping of nitrogen by such regions, and an incorporation of nitrogen into the amorphous matrix of HfSiO x . We will demonstrate that the positron annihilation technique is a useful tool for studies of vacancies and open volumes in metal oxides.

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“…Using the positron annihilation technique and x-ray photoelectron spectroscopy (XPS), Uedono et al 18 reported the effect of nitrogen incorporation in 5 nm-thick HfSiON x films deposited on Si substrates. They reported that the average size of open spaces increased as x increased, and this is mainly due to the increase in the density of Si-N bonds.…”

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Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams

Uedono

Yamada

Hosoi

et al. 2018

Applied Physics Letters

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The impact of nitridation on open spaces in thin AlON x films deposited by a reactive sputtering technique was studied by using monoenergetic positron beams. For AlON x films with x ¼ 0%-15%, positrons were found to annihilate from trapped states in open spaces, which coexist intrinsically in an amorphous structure with three different sizes. Nitrogen incorporation into the Al 2 O 3 film increased the size of the open spaces, and their density increased as the post-deposition annealing temperature increased. The effect of nitrogen incorporation, however, diminished at x ¼ 25%. The observed change in the network structure was associated with the formation of a stable amorphous structure, which we could relate to the electrical properties of AlON x /SiO 2 /Si gate stacks.

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Characterization of HfSiON gate dielectrics using monoenergetic positron beams

Cited by 25 publications

References 28 publications

Annealing Behaviours of Open Spaces in Thin Al₂O₃ Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams

Annealing Behaviours of Open Spaces in Thin Al₂O₃ Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams

Defect characterization of crystalline metal oxides and high-k films by means of positron annihilation

Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams

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Characterization of HfSiON gate dielectrics using monoenergetic positron beams

Cited by 25 publications

References 28 publications

Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams

Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams

Defect characterization of crystalline metal oxides and high-k films by means of positron annihilation

Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams

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Annealing Behaviours of Open Spaces in Thin Al₂O₃ Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams

Annealing Behaviours of Open Spaces in Thin Al₂O₃ Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams