Characterization of High‐
            <i>k</i>
            Dielectric Internal Structure by X‐Ray Spectroscopy and Reflectometry: New Approaches to Interlayer Identification and Analysis

Filatova, E. O.; Sokolov, Andréy; Кожевников, И. В.

doi:10.1002/9783527646340.ch7

Cited by 5 publications

(3 citation statements)

References 89 publications

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“…To estimate the thickness of the chemically different layers in the studied TiN/SiO 2 /Si stack, we used the approach described in more details in our previous reports. , Using the decomposition analysis of Ti 2p spectra, a complex multiphase structure of the 10 nm TiN electrode related to its oxidation at both top and bottom interfaces can be represented as a TiO 2 /TiN x O y /TiN/TiN x O y /TiO 2 /SiO 2 multilayer entity. In this model, we did not take into account the formation of the SiO x layer at the TiN/SiO 2 interface due to the absence of the corresponding Si 2p signal components in the spectra measured at electron emission angles larger than 30°.…”

Section: Resultsmentioning

confidence: 99%

Inhibition of Oxygen Scavenging by TiN at the TiN/SiO₂ Interface by Atomic-Layer-Deposited Al₂O₃ Protective Interlayer

et al. 2019

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Chemical composition of interfaces between physical-vapor deposited TiN and SiO 2 as affected by introduction of a thin (0.5-3 nm) alumina interlayer was studied using photoelectron spectroscopy with high kinetic energies of photoelectrons (HAXPES) and near edge X-ray absorption fine structure (NEXAFS). Our results reveal formation of TiO 2 and titanium oxynitride phases both at the bottom interface of the TiN film and at its surface due to oxygen scavenging from the SiO 2 and oxidation in air, respectively. Insertion of alumina layer as thin as units of nm prevents the TiO 2 growth at the bottom TiN/SiO 2 interface but leads to formation of aluminosilicate layer. The thickness of this silicate layer practically independent on the thickness

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Section: Resultsmentioning

confidence: 99%

Inhibition of Oxygen Scavenging by TiN at the TiN/SiO₂ Interface by Atomic-Layer-Deposited Al₂O₃ Protective Interlayer

et al. 2019

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“…However, if it is unknown, modeling would have a high degree of degeneracy, so the results would not be reliable as demonstrated in, e.g., Ref. [23].…”

Section: Experimental Data Processingmentioning

confidence: 97%

“…A detailed description of our model-free approach, the fitting procedure and the choice of the merit function providing the necessary asymptotic behavior of the reflectivity, the discussion of the calculation algorithm, analysis of the roughness effect on the dielectric constant reconstruction as well as examples of the model and experimental reconstruction of the dielectric constant profiles, are given elsewhere [23,27,28,30].…”

Section: Experimental Data Processingmentioning

confidence: 99%

Investigation of natural contamination layer growth on optical substrates

et al. 2018

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The surface contamination layer on mirrors can cause significant degradation of the optical performance, which is widely observed in applications, particularly in the fabrication of X-ray focusing telescopes. In this paper, we study the natural contamination layer arising from adsorption precipitation of hydrocarbons or other organic and water molecules in the absence of any external factor. Temporal evolution of the layer formed on super-smooth fused silica, borosilicate glass, and silicon substrates is studied by X-ray reflectometry, atomic force microscopy, and transmission electron microscopy for a one-year period after surface cleaning. The general characteristics of adhesion layer growth are established and discussed. The reconstructed dielectric constant profiles demonstrate that an increase in the adhesion layer thickness, deposited mass and density over time obeys power laws with extremely small exponents. Therefore, the adhesion layer growth is rapid immediately after surface cleaning, with a ∼ 1 nm thick layer formed within the first day on all three substrates studied, while the layer density is low (∼ 1 g/cm 3 ). The layer growth on the fused silica and silicon substrates became very slow in the succeeding days, with only a 1.4-1.5 nm thick layer and 1.2-1.3 g/cm 3 density after one year of storage in air. At the same time, the adhesion layer growth on the glass substrate showed unexpected acceleration about two months after cleaning, so that the layer thickness reached ∼ 2.2 nm after one year of storage. The reason for this effect, which is connected with leaching of the glass, is discussed briefly.

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Re-distribution of oxygen at the interface between γ-Al2O3 and TiN

Filatova

Konashuk

Sakhonenkov

et al. 2017

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Interface of TiN electrode with γ-Al2O3 layers was studied using near edge X-ray absorption fine structure, conventional X-ray photoelectron spectroscopy and photoelectron spectroscopy with high energies. Despite the atomic-layer deposited Al2O3 being converted into thermodynamically-stable polycrystalline cubic γ-phase by high-temperature (1000 or 1100 °C) anneal, our results reveal formation of a thin TiNxOy (≈1-nm thick) interlayer at the interface between γ-Al2O3 film and TiN electrode due to oxygen scavenging from γ-Al2O3 film. Formation of the TiO2 was not observed at this interface. As environmental effect, a strong oxidation resulting in formation of a TiO2(1.4 nm)/TiNxOy(0.9 nm) overlayers on the top of the TiN electrode is traced. Development of O-deficiency of γ-Al2O3 is observed and related to the polarization anisotropy due to the preferential orientation of spin states involved in the X-ray absorption in the plane parallel to the surface. Investigation of the TiN electrode reveals the predominantly “stretched” octahedra in its structure with the preferential orientation relative the interface with γ-Al2O3. This anisotropy can be correlated with ≈200 meV electron barrier height increase at the O-deficient TiN/γ-Al2O3 interface as compared to the TiN/γ-Al2O3 barrier formed under abundant oxidant supply condition as revealed by internal photoemission of electrons from TiN into the oxide.

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Characterization of High‐ k Dielectric Internal Structure by X‐Ray Spectroscopy and Reflectometry: New Approaches to Interlayer Identification and Analysis

Cited by 5 publications

References 89 publications

Inhibition of Oxygen Scavenging by TiN at the TiN/SiO₂ Interface by Atomic-Layer-Deposited Al₂O₃ Protective Interlayer

Inhibition of Oxygen Scavenging by TiN at the TiN/SiO₂ Interface by Atomic-Layer-Deposited Al₂O₃ Protective Interlayer

Investigation of natural contamination layer growth on optical substrates

Re-distribution of oxygen at the interface between γ-Al2O3 and TiN

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Characterization of High‐ k Dielectric Internal Structure by X‐Ray Spectroscopy and Reflectometry: New Approaches to Interlayer Identification and Analysis

Cited by 5 publications

References 89 publications

Inhibition of Oxygen Scavenging by TiN at the TiN/SiO2 Interface by Atomic-Layer-Deposited Al2O3 Protective Interlayer

Inhibition of Oxygen Scavenging by TiN at the TiN/SiO2 Interface by Atomic-Layer-Deposited Al2O3 Protective Interlayer

Investigation of natural contamination layer growth on optical substrates

Re-distribution of oxygen at the interface between γ-Al2O3 and TiN

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Inhibition of Oxygen Scavenging by TiN at the TiN/SiO₂ Interface by Atomic-Layer-Deposited Al₂O₃ Protective Interlayer

Inhibition of Oxygen Scavenging by TiN at the TiN/SiO₂ Interface by Atomic-Layer-Deposited Al₂O₃ Protective Interlayer