Characterization of high-speed writing and reading operations of the superconducting memory cell

Abstract

Superconducting memory cells that use flux quanta as their storage medium can achieve ultra-fast access times with ultra-low power consumption. However, the data signal generated by a flux quantum memory (FQM) cell is usually too weak and too fast to be measured directly. Here, we present a method to characterize the real-time operation of an FQM cell. The storage loop of the FQM cell, configured with a Nb/NbNX/Nb Josephson junction, was proven the capability to store multiple flux quanta. The readout was demonstrated by a superconducting quantum interference device composed of underdamped Nb/Al-AlOX/Nb Josephson junctions. The writing and reading operations were achieved by a short pulse ranging from 0.1 ns to 2.5 ns, and a constant bit error rate of ~2.46% was measured for the fabricated FQM cell. The method presented here can be used to study real-time operation of an FQM cell in a direct manner.