Characterization of highly (117)-oriented Bi 3.25 La 0.75 Ti 3 O 12 thin films prepared by rf-magnetron sputtering technique

Ma, Shuai; Cheng, Xingwang; Ma, Zhaolong; Xu, Zhijun; Chu, Ruiqing

doi:10.1016/j.ssc.2018.04.011

Cited by 6 publications

(3 citation statements)

References 20 publications

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“…BIT thin films co-doped with Sm and Ta, denoted as BSTTO, exhibited markedly improved ferroelectric properties, boasting a higher remanent polarization (2P r = 46.2 µC/cm 2 ) compared to BIT thin films (2P r = 26 µC/cm 2 ) [21]. Various techniques, including pulsed laser deposition (PLD) [22], magnetron sputtering (MS) [23], metal-organic chemical vapor deposition (MOCVD) [24], and the sol-gel method [25], have been employed for the preparation of BLT ferroelectric thin films. Among these, the sol-gel process stands out for its cost-effectiveness, facile stoichiometry control, and uniform deposition over large areas, making it versatile for widespread applications.…”

Section: Introductionmentioning

confidence: 99%

Effect of Thickness on Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films

Yue,

Cai,

Guo

et al. 2024

Ceramics

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The pursuit of low-power/low-voltage operation in devices has prompted a keen interest in the mesoscale effects within ferroelectric thin films. The downsizing of ferroelectrics can significantly influence performance; for instance, the remanent polarization and coercive field are susceptible to alterations based on thickness. In this study, randomly oriented Bi3.25La0.75Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates using the sol–gel method, and SEM observations revealed rod-like grains in all thin films. The investigation delved into the correlation between dielectric and ferroelectric properties with thin film thickness. The thin film exhibited an increased remanent polarization and a reduced coercive electric field. Additionally, the ferroelectric domain structure was scrutinized through PFM, and the resistor properties of the BLT4 thin film were studied, which shows the potential of BLT thin films in non-volatile memory and memristor.

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Section: Introductionmentioning

confidence: 99%

Effect of Thickness on Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films

Yue,

Cai,

Guo

et al. 2024

Ceramics

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“…[11] Several researchers have investigated Bismuth titanate thin films by utilizing different techniques, for example, sputtering, pulsed laser deposition, solution combustion route, chemical bath deposition, atomic layer deposition, and sol-gel strategy. [12][13][14][15][16][17][18] Until recently, it has been known that several works have concentrated on films based on ferroelectric, magnetic and optical properties, BTO replaced with thin films on an A-site (La, Nd, Eu, Sm, Y, etc. ), B-site (Mn, Nb, Ta, V, Zr, etc.)…”

Section: Introductionmentioning

confidence: 99%

A‐Site Doped Aurivillius Layered Perovskite Thin Film (Bi_4‐xDy_xTi₃O₁₂) Electrode for Mercury Ions Sensor

Roselin

Rajendran

Panneerdoss³

et al. 2021

ChemistrySelect

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Heavy metals are highly polluting the environment and are considered a serious concern. As a result, early detection of these heavy metals is critical. In this research work, we focus on a new electrochemical sensor based on rare earth element (Dysprosium, Dy) modified with Aruvillius layered Perovskite (Bismuth titanate, Bi 4 Ti 3 O 12 , BTO) thin film electrodes with different concentrations of (0, 2 %, 4 %, 6 %) Dysprosium (Dy)was prepared using the sol-gel spin coating method for mercury (Hg 2 + ) ions detection.The X-ray diffraction analysis reveals the prepared sample exhibits a polycrystalline orthorhombic structure. The highest emission peak at 575 nm is discerned in the more visible region corresponding to the transition of 4F 9/2 !6H 3/2 . In the X-ray photoelectron spectro-scopy analysis, the existence of Bi, Ti, O, and Dy is demonstrating the successful formation of prepared material. In the electrochemical section, various parameters such as pH, scan rate, and different concentrations of (Hg 2 + ) ions were investigated. From the Cyclic Voltammetry and Electrochemical Impedance analysis, 4 % Dy doped BTO has been identified as an active electrochemical participant and has low charge transfer resistance. The stability analysis result shows the better stability of the electrode during the cycling for sensing application with a lower detection limit of 1.27 μM. It indicated that the modified 4 % Dy doped BTO thin film electrode can be explored for real-time analysis.

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“…Therefore, extensive researches are going on to obtain a substitute for lead-based ferroelectric materials. Bismuth layered structured ferroelectric (BLSF) materials are reported as a promising group of materials, which consist of bismuth oxide layers (Bi 2 O 3 ) 2+ and perovskitelike layers (A n-1 B n O 3n+1 ) 2along c-axis [7]. Among the BLSF family, Bismuth titanate, Bi 4 Ti 3 O 12 (BIT), has been considered an alternative of lead-based ferroelectric ceramics because of their enhanced performance, such as high dielectric constant, with high remnant polarization with high Curie temperature [4,8].…”

Section: Introductionmentioning

confidence: 99%

Distorted Lattice Structure of La and Nd Co-Doped Bismuth Titanate Bi3-XTi4O12 Nano-Grained Ceramics for High Quality Energy Storage Application

Islam

2021

EJCEE

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Capacitive energy storage technology becomes more popular due to the fast charging facilities. Bismuth titanate (BIT) is a lead-free ferroelectric material used as a dielectric medium in the capacitive energy storage system. La and Nd co-doped BIT has been synthesized through a solid-state reaction process to obtain improved dielectric properties. Various characterization technologies such as Fourier Transform Infrared (FTIR) and X ray diffraction (XRD) have been done to sure the reaction completion and absence of the impurity phase of BIT. Rietveld refinement of XRD has been carried out to investigate the crystal structural properties of La and Nd-doped BIT. Capacitive energy storage performances have been tested by measuring the parallel plate capacitance and quality factor of BIT ceramics. Co-doped BIT possesses the highest crystal density, which results in a high Q factor. The unit cell of the TiO6 octahedral of BIT becomes highly distorted as a consequence of La and Nd co-doping, which increases surface polarization, and the capacitance of BIT increases.

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Characterization of highly (117)-oriented Bi 3.25 La 0.75 Ti 3 O 12 thin films prepared by rf-magnetron sputtering technique

Cited by 6 publications

References 20 publications

Effect of Thickness on Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films

Effect of Thickness on Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films

A‐Site Doped Aurivillius Layered Perovskite Thin Film (Bi_4‐xDy_xTi₃O₁₂) Electrode for Mercury Ions Sensor

Distorted Lattice Structure of La and Nd Co-Doped Bismuth Titanate Bi3-XTi4O12 Nano-Grained Ceramics for High Quality Energy Storage Application

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Characterization of highly (117)-oriented Bi 3.25 La 0.75 Ti 3 O 12 thin films prepared by rf-magnetron sputtering technique

Cited by 6 publications

References 20 publications

Effect of Thickness on Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films

Effect of Thickness on Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films

A‐Site Doped Aurivillius Layered Perovskite Thin Film (Bi4‐xDyxTi3O12) Electrode for Mercury Ions Sensor

Distorted Lattice Structure of La and Nd Co-Doped Bismuth Titanate Bi3-XTi4O12 Nano-Grained Ceramics for High Quality Energy Storage Application

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Product

Resources

About

A‐Site Doped Aurivillius Layered Perovskite Thin Film (Bi_4‐xDy_xTi₃O₁₂) Electrode for Mercury Ions Sensor