Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures

Moultif, Niemat; Joubert, Eric; Masmoudi, Mohamed; Latry, Olivier

doi:10.1016/j.microrel.2017.07.013

Cited by 9 publications

(3 citation statements)

References 6 publications

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“…However, in deriving ( 5), the charging time to the input capacitance C iss is ignored, assuming that the time constant C iss R G is sufficiently small. As shown in (5)…”

Section: B Gate Drive Circuit Configurationmentioning

confidence: 91%

“…Since the purpose of this experiment is to verify the basic operation, the output voltage v OUT of the charge measurement part was measured with an oscilloscope instead of the controller. Based on the measured v OUT , the input capacitance C iss was calculated using (5). Fig.…”

Section: Operational Verification By Experimentsmentioning

confidence: 99%

“…S ILICON carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) exhibit excellent performance as power devices due to their higher breakdown voltage compared to that of Si MOSFETs [1]- [5]. However, the gate oxide of SiC MOSFETs has been reported to degrade with long-term use [6]- [11].…”

Section: Introductionmentioning

confidence: 99%

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Operational Verification of Gate Drive Circuit With Condition Monitoring Function for Gate Oxide Degradation of SiC MOSFETs

Hayashi,

Wada

2024

IEEE Open J. Power Electron.

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This paper proposes a gate drive circuit with a condition monitoring function for detecting the gate oxide degradation in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). Trapped charges in the gate oxide can cause fluctuations in the on-resistance and gate threshold voltages. These phenomena affect the long-term reliability of power conversion circuits. The proposed condition monitoring function detects the degradation of the gate oxide by measuring the input capacitance C iss versus the gate-source voltage v GS characteristics (C iss -v GS characteristics) of SiC MOSFETs implemented in power conversion circuits. Experiments on the proposed gate drive circuit were conducted using a 400 W-rated buck converter circuit in which a SiC MOSFET is implemented. The experimental results show that the gate drive circuit is capable of online measurement of C iss -v GS characteristics and gate drive at 20 kHz. The online measurement of the C iss -v GS characteristics corresponds to the offline measurement with a measurement instrument, indicating the effectiveness of the gate drive circuit.INDEX TERMS Condition monitoring, gate drive circuit, gate oxide, long-term reliability, SiC MOSFET.

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“…However, in deriving ( 5), the charging time to the input capacitance C iss is ignored, assuming that the time constant C iss R G is sufficiently small. As shown in (5)…”

Section: B Gate Drive Circuit Configurationmentioning

confidence: 91%

Section: Operational Verification By Experimentsmentioning

confidence: 99%