2007
DOI: 10.1117/12.734095
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Characterization of hydrogenated silicon carbide produced by plasma enhanced chemical vapor deposition at low temperature

Abstract: A new technology has been developed to grow layers of amorphous hydrogenated Silicon Carbide in vacuum, at temperatures below 100-120°C by Physical Enhanced Chemical Vapour Deposition (PE-CVD) technology. The layers have been used either to improve the surface quality of SiC mirror substrates (produced by methods different of the CVD approach, like e.g. sintered SiC) as a super-polishable cladding coatings, or to form self-sustaining thin mirrors in SiC. It should be noted that the PE-CVD claddings can be appl… Show more

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