Characterization of n-type Cu2O deposited by reactive ion beam sputter deposition

Abstract

Cuprous oxide (Cu2O) has been successfully deposited by reactive ion beam sputter deposition at 450 °C with various oxygen flow rates. At high oxygen flow rates, single phase polycrystalline Cu2O thin film was attained while low oxygen flow rates results in the formation of Cu2O nanorods. X-ray diffraction, Raman, and x-ray photoelectron spectroscopy analyses indicate that both samples are composed of Cu2O phase only without the presence of CuO while samples deposited with low oxygen flow rates exhibit improved crystalline quality. Photocurrent measurement result indicates that Cu2O samples prepared under low oxygen flow rate are of n-type. Photoluminescence study suggests that this n-type conductivity is due to the presence of intrinsic oxygen vacancy defects.

Cu Single Atoms Embedded in N-Doped Hollow Carbon Spheres for Simultaneous Electrochemical Detection of Hydroquinone and Catechol

“…Besides, three sharp peaks in the XRD pattern of SiO 2 @ Cu SAs/N-CSs at 36.64, 63.28, and 76.54°can be indexed to the (111), (220), and (222) crystal planes of Cu 2 O (JCPDS no. 78-2076), 30 respectively, while no other diffraction peaks are observed from the XRD pattern of Cu SAs/N-CSs, similar to N-CSs. The above information indicates that the metal oxides in the catalysts are eluted after acid impregnation, resulting in that only Cu SAs are uniformly dispersed on the shell of the hollow carbon spheres as the active components.…”

Stable Cu2O Photoelectrodes by Reactive Ion Beam Sputter Deposition

“…Cu 2 O prepared by thermal oxidation or by physical vapor deposition usually contains copper vacancy (V Cu ) defects with a carrier density as high as 10 18 cm −3 that results in its p-type conductivity [6]. On the contrary, as our previous report [7] indicates, high-quality n-type Cu 2 O material can be deposited by controlling the oxygen flow rates using reactive ion beam sputter deposition (IBSD) in addition to other studies [8][9][10] done by sputtering and electrodeposition without doping. In this article, we report the demonstration of both n-type and p-type Cu 2 O photoelectrodes fabricated by reactive IBSD.…”

“…Cu 2 O samples were deposited on quartz substrates in an IBSD chamber [2,7,11]. e substrates were cleaned ultrasonically in ethyl alcohol for 10 minutes and then subsequently in deionized water.…”

Orientation dependence of electrical properties of polycrystalline Cu2O thin films

“…This can be explained by the existence of Cu 2 O/Cu Schottky barriers at internal interfaces of the material, which are commonly known to cause Fermi level pinning and a depletion of the material [15,16]. Reports exist in literature, which claim that copper-rich conditions or electrodeposition led to n-type behaviour [17,18]. Note, that the existence of undoped n-type Cu 2 O in the form of thin films was questioned by ab-initio calculations [19].…”