Characterization of IGBTs for high-speed switches for laser applications

Kluge, Andreas; Gueldner, H.; Goehler, Lutz

doi:10.1109/ppc.2013.6627578

Cited by 2 publications

(6 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Due to the fact that the output energy of the laser depends is linearly dependend on the tube peak current this parameter can be used as quality criteria. The results regarding the IGBTs are as predicted from single device characterization in [6]. The variants with 1700 V/150 A-IGBTs reach lower peak currents than the 4x1200 V/35 A-variant due to the less dynamic switching behavior.…”

Section: Measurement Resultssupporting

confidence: 54%

“…To control the cascade a galvanically isolated Gate-Drive is necessary which takes the high dynamic gate voltage pulses of about 50 V to 80 V with pulse lengths of about 50 ns into account [6]. The rise time t r0,80 , measured between the voltage level from 0 V to 80 V should be below 20 ns to obtain the desired output dynamics.…”

Section: Pulse Transformermentioning

confidence: 99%

“…The result of [6] was that all investigated chips could reach the desired dynamics, whereas the 1200 V-IGBTs were preferred regarding peak switch current. 1700 V-IGBTs showed a less dynamic switching behavior with smaller peak currents.…”

Section: Introductionmentioning

confidence: 99%

“…Regarding voltage and peak current capabilities IGBT-chips are a promising solution. Recently different characterization and gate drive strategies for IGBTs have been published which led to promising results for a switching module made of these devices [2]- [6]. In [6] and [7] theoretical and practical IGBT-device selection aspects have been discussed extensively.…”

Section: Introductionmentioning

confidence: 99%

“…Recently different characterization and gate drive strategies for IGBTs have been published which led to promising results for a switching module made of these devices [2]- [6]. In [6] and [7] theoretical and practical IGBT-device selection aspects have been discussed extensively. The slopes of voltage and current were raised by a special gate drive strategy called GateBoosting by about one order of magnitude compared to the switching speed in classic power electronic applications.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Design and comparison of IGBT-based switching modules for laser applications

Kluge

Gueldner

Trompa

et al. 2014

2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC)

Self Cite

View full text Add to dashboard Cite

This paper presents the design of IGBT-based switching modules for a nitrogen gas laser. Cascades with a 11-cell series connections based on different IGBT-chips (1700 V and 1200 V) have been built up and measured. The focus of the design is the development of a high speed synchronous gate drive for the IGBT-gates. The module equipped with the four parallel 1200 V/35 A-IGBTs per cell produces the highest switching power. Among the variants, the peak switch current is up to 700 A at blocking voltages of up to 13.2 kV in the real environment of the nitrogen laser. The switch current slope reaches up to 30 A ns −1 and the laser tube current up to 1.8 kA.The variant with 1200 V/35 A-IGBTs produces an output energy which is about 15 % higher compared to the former MCT-based switch. Thus, the IGBT-based switches are able to replace the MCT-switches in this application. Between the different IGBTbased switches a tradeoff has to be done between high output energy and the effort for the assembly of the switch. 182978-1-4799-4047

show abstract

Section: Measurement Resultssupporting

confidence: 54%

Section: Pulse Transformermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%