2001
DOI: 10.1021/la011101t
|View full text |Cite
|
Sign up to set email alerts
|

Characterization of Indium−Tin Oxide Interfaces Using X-ray Photoelectron Spectroscopy and Redox Processes of a Chemisorbed Probe Molecule:  Effect of Surface Pretreatment Conditions

Abstract: Surface characterization of indium−tin oxide (ITO) thin films has been carried out with monochromatic X-ray photoelectron spectroscopy (XPS) following various solution pretreatments, RF air plasma etching or high-vacuum argon-ion sputtering. Commercially available ITO films show high concentrations of hydrolyzed oxides and oxy-hydroxides in the near-surface region, along with stoichiometric oxide (In2O3, SnO2) and variable levels of oxygen defect sites. XPS revealed that solution and vacuum treatments changed … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

41
396
0
2

Year Published

2004
2004
2015
2015

Publication Types

Select...
7
2

Relationship

1
8

Authors

Journals

citations
Cited by 375 publications
(439 citation statements)
references
References 39 publications
41
396
0
2
Order By: Relevance
“…Indium tin oxide (ITO) films on soda lime glass (Colorado Concept Coatings) with a sheet resistance of approximately 20 ohmsper-square, and a root-mean-square (rms) surface roughness of 1-2 nm (determined using atomic force microscopy on scan areas of 1 µm 2 ) were used throughout. The ITO substrates were cleaned by scrubbing with a 2% Triton-X solution for 1 min, and then sonicating for 10 min each in 2% Triton-X, water, and ethanol, 29 followed by low-temperature air plasma cleaning (Harrick model PDC-3XG) for 15 min at 30 W. Before use, ITO substrates were soaked for 12-48 h in 10 mM phosphate buffer, pH 7. Wet chemical etching of ITO was accomplished by soaking the ITO coated substrates in a 6 M HCl/0.2 M FeCl 3 solution for 5 min.…”
Section: Methodsmentioning
confidence: 99%
“…Indium tin oxide (ITO) films on soda lime glass (Colorado Concept Coatings) with a sheet resistance of approximately 20 ohmsper-square, and a root-mean-square (rms) surface roughness of 1-2 nm (determined using atomic force microscopy on scan areas of 1 µm 2 ) were used throughout. The ITO substrates were cleaned by scrubbing with a 2% Triton-X solution for 1 min, and then sonicating for 10 min each in 2% Triton-X, water, and ethanol, 29 followed by low-temperature air plasma cleaning (Harrick model PDC-3XG) for 15 min at 30 W. Before use, ITO substrates were soaked for 12-48 h in 10 mM phosphate buffer, pH 7. Wet chemical etching of ITO was accomplished by soaking the ITO coated substrates in a 6 M HCl/0.2 M FeCl 3 solution for 5 min.…”
Section: Methodsmentioning
confidence: 99%
“…Over the years, OTEs have been prepared by coating thin films of metals (e.g., gold and platinum), carbon, and metal oxides onto glass or quartz substrates. Of these, indium tin oxide (ITO) films have been the most widely used (11,12). ITO is a Sn(IV)-doped, In 2 O 3 -based n-type semiconductor, which, along with ZnO, has been extensively applied for >20 years to electrooptical devices and photovoltaics (13).…”
mentioning
confidence: 99%
“…Peak C at BE of 532 eV is attributed to chemisorbed OH groups on the surface, often shown as indium oxyhydroxide (InOOH). 22,27,29 This peak is indicative for the amount of chemisorbed OH in the layers, surface, and grain boundaries. The fourth peak at 533 eV, peak D, we assign to O in metal carbonates (C-O-M) 29 or molecularly chemisorbed H 2 O.…”
mentioning
confidence: 99%
“…The high-resolution core-level O1s spectra were then recorded and Gauss-Lorentz fitted, which is the standard procedure for In 2 O 3 compounds. 22 The H 2 O and H 2 desorption of the films was investigated by thermal desorption spectroscopy (TDS). For this an ESCO EMD-WA1000S system operated at ultrahigh vacuum (<1.0 × 10 −9 Torr) was used in which the samples are lamp heated up to 1000 • C, with a linear temperature ramp of 20 K min −1 .…”
mentioning
confidence: 99%