Characterization of indium tin oxide (ITO) thin films prepared by a sol–gel spin coating process

Cho, Hyun; Yun, Young-Sun

doi:10.1016/j.ceramint.2010.09.033

Cited by 67 publications

(30 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…ITO is widely used as a transparent electrode in a variety of optoelectronic devices, such as light-emitting diodes (LEDs) [3], top emitting VCSELs [4], liquid crystal displays (LCDs) [5], and as a transparent electrode for solar cell applications [6,7]. Several deposition techniques are commonly used to prepare ITO thin films with high transmittance and low resistivity, such as chemical vapor deposition [8], spray pyrolysis [9], radio frequency plasma enhanced reactive thermal evaporation (rf-PERTE) [10], sol gel [11], activated reactive evaporation (ARE) [4], electron beam evaporation [1][2], DC and RF magnetron sputtering [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Effect of the Annealing Gas and RF Power Sputtering in the Electrical, Structural and Optical Properties of ITO Thin Films

Boussoum¹,

Belkaid²,

Renard³

et al. 2019

J. Nano- Electron. Phys.

View full text Add to dashboard Cite

In the paper we propose to investigate the effect of the annealing gas and RF power sputtering on the electrical, structural and optical properties of indium tin oxide thin films for solar cells applications. These thin films were prepared on lightly doped silicon wafer by RF sputtering in Ar environment at room temperature and with a pressure of 8•10-3 mbar. Process parameters such as RF power and post deposition annealing were varied in order to determine their dependence on electrical, structural and optical properties of ITO thin films. Layer morphology and thickness measurements (with cross section) were investigated by scanning electron microscopy, and atomic force microscopy was performed to determine the surface roughness. The dependence of the resistivity, mobility and carrier concentration of these films by varying RF power and thermal annealing were studied by Hall Effect measurement. Spectroscopic ellipsometry was also used to determine the refractive index, thickness, roughness, porosity and optical bandgap of the films. Thus, the optical transmittance in the visible region was found to be above 85 %, the low resistivity and high mobility were found 2.09 10-4 Ω•сm and 35.81 cm 2 /(V•s), respectively, for 200 nm thickness for the sample elaborated with a RF power of 150 W and an annealing at 400 °C for 10 min with rapid thermal annealing under N2. The X-ray diffraction patterns of the thin films indicated a preferred orientation along the (222) plane, which provides a high degree of crystallinity for all N2 annealed samples. The XPS was used to determine oxidation states and identify the elemental content in the films. Obtained results for the surface morphology, electrical and optical properties of the ITO thin film details will be presented.

show abstract

Section: Introductionmentioning

confidence: 99%

Effect of the Annealing Gas and RF Power Sputtering in the Electrical, Structural and Optical Properties of ITO Thin Films

Boussoum¹,

Belkaid²,

Renard³

et al. 2019

J. Nano- Electron. Phys.

View full text Add to dashboard Cite

show abstract

“…The deposition of TCOs on the substrate can be made using several physical or chemical methods, such as spincoating [8], magnetron sputtering [9], chemical vapor deposition (CVD) [10], vacuum evaporation [11], reaction evaporation [12] and the sol-gel process [6,[13][14][15][16][17][18][19]. The sol-gel method has several advantages, including simplicity, low cost, easily controlled doping levels and feasible preparation of large area films [6].…”

Section: Introductionmentioning

confidence: 99%

“…Among the various transparent conductive oxides (TCOs) such as flour tin oxide (FTO), aluminum zinc oxide (AZO) and aluminum tin oxide (ATO), the best known is tin-doped indium oxide (ITO) due to its considerable characteristics of high optical transmittance over the visible spectrum, high conductivity, and chemical stability [4][5][6]. Often, 10 mol% of Sn 4? ions are dissolved into In 2 O 3 lattice to form the ITO solution with maximum conductivity [7].…”

Section: Introductionmentioning

confidence: 99%

“…The sol-gel method has several advantages, including simplicity, low cost, easily controlled doping levels and feasible preparation of large area films [6]. Furthermore, this method, as a chemical route procedure can be combined with deposition techniques such as spin-and dip-coating for use in the preparation of thin films [20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The effect of solvents and the thickness on structural, optical and electrical properties of ITO thin films prepared by a sol–gel spin-coating process

et al. 2014

View full text Add to dashboard Cite

In this study, tin-doped indium oxide (ITO) thin films were produced by the sol-gel spin-coating technique with an inexpensive salt of indium (In(NO 3 ) 3-H 2 O) and SnCl 4 as indium and tin precursors (the molar ratio of In:Sn was 9:1), respectively. Then the prepared thin films were annealed in the temperature of 550°C under argon atmosphere (the pressure of 10 torr). Polyvinylalcohol (PVA) was used as stabilizers in the synthesis of ITO sol. The prepared ITO thin films were characterized by EDX, XRD, FT-IR, UV-Vis spectroscopy and SEM images. The XRD patterns of the thin films indicated the main peak of the (2 2 2) plane corresponded to indium oxide with high degree of crystallinity. The FT-IR spectroscopy confirmed that indium tin oxide has been prepared by appearance of a peak at 470 cm -1 that can be assigned to the vibrations of In-O bonds. The optical direct band gap of ITO thin films was calculated about 3.98-4.17 eV by optical transmittance measurements. The grain size of ITO nanoparticles was obtained at about 25-50 nm by SEM images. The electrical characterization was done by the four-point probe method to determine the sheet resistance and resistivity. The effects of coating number on ITO thin films properties were investigated. The low resistivity (sheet resistance of 2.5 kX/cm 2 ) and highly transparent films were obtained that can be applied as covers on heater windows. Appearance of a peak at 470 cm -1 can be assigned to the vibrations of In-O bonds and are characteristic of cubic In 2 O 3 .

show abstract

“…Up to now, many researchers have studied the microstructural changes of ITO nanoparticles during the preparation process using various analysis tools. [23][24][25] However, these reactions are very complicated and are not well understood. In this study, we investigated the microstructural changes of ITO during the annealing process.…”

Section: 22mentioning

confidence: 99%

Influence of Thermal Annealing on the Microstructural Properties of Indium Tin Oxide Nanoparticles

Kim¹,

Kim²,

Choi³

2012

Bulletin of the Korean Chemical Society

View full text Add to dashboard Cite

In this work, we studied the microstructural changes of ITO during the annealing process. ITO nanoparticles were prepared by the sol-gel method using indium tin hydroxide as the precursor. The prepared sample was investigated using TEM, powder XRD, XPS, DRIFT, and 2D correlation analysis. The O 1s XPS spectra suggested that the microstructural changes during the annealing process are closely correlated with the oxygen sites of the ITO nanoparticles. The temperature-dependent in situ DRIFT spectra suggested that In-OH in the terminal sites is firstly decomposed and, then, Sn-O-Sn is produced in the ITO nanoparticles during the thermal annealing process. Based on the 2D correlation analysis, we deduced the following sequence of events: 1483 (due to In-OH bending mode) → 2268, 2164 (due to In-OH stretching mode) → 1546 (due to overtones of Sn-O-Sn modes) → 1412 (due to overtones of Sn-O-Sn modes) cm −1.

show abstract

Characterization of indium tin oxide (ITO) thin films prepared by a sol–gel spin coating process

Cited by 67 publications

References 15 publications

Effect of the Annealing Gas and RF Power Sputtering in the Electrical, Structural and Optical Properties of ITO Thin Films

Effect of the Annealing Gas and RF Power Sputtering in the Electrical, Structural and Optical Properties of ITO Thin Films

The effect of solvents and the thickness on structural, optical and electrical properties of ITO thin films prepared by a sol–gel spin-coating process

Influence of Thermal Annealing on the Microstructural Properties of Indium Tin Oxide Nanoparticles

Contact Info

Product

Resources

About