2017
DOI: 10.1107/s1600577517009584
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Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

Abstract: Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson function, which is the autocorrelation of the electron density as well as the Fourier transformation of the diffracted intensity distribution of an object. Partial Patterson functions were extracted from the diffracted… Show more

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Cited by 9 publications
(11 citation statements)
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“…As the extended Poincaré plot assesses autocorrelation in a time-series, a higher degree of autocorrelation suggests the presence of an autoregressive process. An in-depth analysis can provide us more information about the order of such a process (Ramsey, 1974). In a first order autoregressive process [AR(1)], the current value of the process is based on the immediately preceding value, and we expect to observe the following behavior:…”
Section: Discussionmentioning
confidence: 99%
“…As the extended Poincaré plot assesses autocorrelation in a time-series, a higher degree of autocorrelation suggests the presence of an autoregressive process. An in-depth analysis can provide us more information about the order of such a process (Ramsey, 1974). In a first order autoregressive process [AR(1)], the current value of the process is based on the immediately preceding value, and we expect to observe the following behavior:…”
Section: Discussionmentioning
confidence: 99%
“…X-rays have a long penetration depth compared with electron and optical beams [1], and modern X-ray optics can provide nanofocusing at the range of tens of nanometers [2,3]. This development has made it possible to investigate complete single semiconductor nanostructures [4][5][6][7][8][9][10][11]. By combining the nanofocused X-ray probe with an applied electrical bias as well as electrical current detection, nanodevices can be investigated in more or less realistic operational conditions.…”
Section: Introductionmentioning
confidence: 99%
“…This latter property, combined with the fact that X-ray diffraction is one of the most precise techniques for studying the state of strain in such small objects, led us to study the diffraction from twisted monocrystalline nanowires within the framework of the kinematic theory of diffraction by helices. Furthermore, as it is now possible, using X-rays and since the advent of thirdgeneration synchrotron sources, to study single nanowires (Favre-Nicolin et al, 2010;Labat et al, 2015;Davtyan et al, 2017), this publication is focused on diffraction from a single object.…”
Section: Introductionmentioning
confidence: 99%