Characterization of InGaGdN layers prepared by molecular beam epitaxy

Tawil, Siti Nooraya Mohd; Kakimi, Rina; Krishnamurthy, Daivasigamani; Emura, S.; Tambo, Hiroyuki; Hasegawa, Shigehiko; Asahi, H.

doi:10.1002/pssr.201004273

Cited by 10 publications

(10 citation statements)

References 10 publications

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“…Si co-doping into GaN barrier layers of the InGaGdN/GaN SLs further enhanced the magnetization and magnetic moment (Fig. 13) [31]. On the contrary, the reduction of magnetization and magnetic moment was observed for the InGaN/GaGdN SLs.…”

Section: E Gd-doped Ingan; Ingagdnmentioning

confidence: 92%

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Growth and characterization of transition-metal and rare-earth doped III-nitride semiconductors for spintronics

et al. 2011

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Transition metal (Cr) and rare-earth (Dd, Dy) doped III-nitride semiconductor bulk layers and superlattice (SL) structures are grown on sapphire (0001) substrates and GaN (0001) templates by plasma-assisted molecular-beam epitaxy. For the GaGdN/GaN and InGaGdN/GaN SL and Si co-doped samples, enhancement of magnetization and magnetic moment are observed, suggesting the carrier-mediated ferromagnetism. Low temperature growth of GaGdN can increase the Gd concentration and magnetization. Results for the Dy-doped GaN as well as the GaCrN/AlN/GaCrN tunnel magneto-resistance (TMR) diodes are also described.

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Section: E Gd-doped Ingan; Ingagdnmentioning

confidence: 92%

“…In order to fabricate the long wavelength spin-controlled photonic devices, we have grown InGaGdN layers on 2 μm-thick MOVPE-grown undoped GaN (0001) template substrates at 400 o C [30]. For the InGaGdN layer, PL emission was observed at the photon energy corresponding to the band gap energy of InGaGdN.…”

Section: E Gd-doped Ingan; Ingagdnmentioning

confidence: 99%

Growth and characterization of transition-metal and rare-earth doped III-nitride semiconductors for spintronics

et al. 2011

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“…The details of the growth processes and the structure characterization should be referred in Ref. 11…”

Section: Sample Preparation and Characterizationsmentioning

confidence: 99%

An approach to temperature‐insensitive band gap – The InGaGdN case

Emura

Mohd‐Tawil

Krishnamurthy

et al. 2012

Physica Status Solidi (b)

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Quaternary alloys InGaGdN with In content of 23% and 14% (Gd % 1% in both) are successfully grown with a sufficient quality to investigate the temperature behavior of photoluminescence (PL). A temperature-independent peak position is found for the sample with In content of 23%, while the sample with In content of 14% shows a weak temperature dependence.A theoretical model to explain the temperature dependence of the band gap of semiconductors is developed, where the interband mixing and the inner stress caused by the difference of the thermal expansion among the component alloys are taken into account.

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“…Apart from doping, several studied have been reported that the synthesis method under specific conditions affecting the properties of the films and could enhanced their properties [7]. To date, variant synthesis method has been used to grow the ZnO films namely, sputtering [8], co-precipitation [9], spin coating [10], hydrothermal [11], MBE [12], spray pyrolysis [13], and chemical bath deposition (CBD) [14]. Among those synthesis methods, sputtering method is more attractive due to its value of low processing temperature, flexibility in control the dopant concentration, and able to develop good quality of film in a large area of substrate which is good for mass-produce especially for industrial applications.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Magnetic Properties of Gd-Doped ZnO by Varying the Gd Concentration via Co-Sputtering Technique

Raship,

Tawil,

Nayan

2024

MSF

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This study reports on the effect of Gd concentrations on the properties of Gd-doped ZnO films. The films were prepared using co-sputtering method at room temperature. Characterization tools such as X-ray diffraction (XRD), atomic force microscopy (AFM), and vibrating sample magnetometer (VSM) were used to analyze the properties of the prepared films. XRD results observed that all the films are well crystalline and designated to the hexagonal wurtzite structure of ZnO with no secondary phases, which confirmed the successful of doping the Gd into ZnO. Topography analysis from AFM discovered the increase of Gd concentrations of Gd-doped ZnO films leads to the increase in grain size and rougher surface of the films. The magnetization of the films effectively depends on the Gd concentrations, which the diamagnetic behavior changed to ferromagnetic behavior upon Gd doping. A film with higher Gd doping concentration is more effective than lower Gd doping in terms of saturation magnetization (Ms), coercivity (Hc) and remanent magnetization (Mr). These findings revealed that optimizing the Gd concentration is very crucial in enhancing the magnetic properties of Gd-doped ZnO films.

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Characterization of InGaGdN layers prepared by molecular beam epitaxy

Cited by 10 publications

References 10 publications

Growth and characterization of transition-metal and rare-earth doped III-nitride semiconductors for spintronics

Growth and characterization of transition-metal and rare-earth doped III-nitride semiconductors for spintronics

An approach to temperature‐insensitive band gap – The InGaGdN case

Enhanced Magnetic Properties of Gd-Doped ZnO by Varying the Gd Concentration via Co-Sputtering Technique

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