Characterization of InGaN-based photovoltaic devices by varying the indium contents

Huang, Chien-Fei; Hsieh, Wen-Yang; Hsieh, B. H.; Hsieh, Chang-Hua; Lin, Chia−Feng

doi:10.1016/j.tsf.2012.06.024

Cited by 17 publications

(4 citation statements)

References 15 publications

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“…The GaN lm is also being used as a base layer for the fabrication of nitride based heterostructures and devices because the band gap of GaN (3.4 eV) lies in between InN (0.7 eV) and AlN (6.2 eV). 6,7 Apart from at and smooth GaN thin lms, 8,9 various GaN nanostructures such as nanowires, nanotubes, nanowalls, nanorods etc. have been grown on a variety of substrates using different growth techniques for various applications.…”

Section: Introductionmentioning

confidence: 99%

Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy

et al. 2015

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aWe have grown homoepitaxial GaN nanowall networks on GaN template using an ultra-high vacuum laser assisted molecular beam epitaxy system by ablating solid GaN target under a constant r.f. nitrogen plasma ambient. The effect of laser repetition rate in the range of 10 to 30 Hz on the structural properties of the GaN nanostructures has been studied using high resolution X-ray diffraction, field emission scanning electron microscopy and Raman spectroscopy. The variation of the laser repetition rate affected the tip width and pore size of the nanowall networks. The z-profile Raman spectroscopy measurements revealed the GaN nanowall network retained the same strain present in the GaN template. The optical properties of these GaN nanowall networks have been studied using photoluminescence and ultrafast spectroscopy and an enhancement of optical band gap has been observed for the nanowalls having a tip width of 10-15 nm due to the quantum carrier confinement effect at the wall edges. The electronic structure of the GaN nanowall networks has been studied using X-ray photoemission spectroscopy and it has been compared to the GaN template. The calculated Ga/N ratio is largest ($2) for the GaN nanowall network grown at 30 Hz. Surface band bending decreases for the nanowall network with the lowest tip width. The homoepitaxial growth of porous GaN nanowall networks holds promise for the design of nitride based sensor devices.

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Section: Introductionmentioning

confidence: 99%

Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy

et al. 2015

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“…They have a wide energy band gap range in electromagnetic spectrum. This range changes from nearinfrared to ultraviolet region (0.7-6.2 eV) [1]. This property makes nitrite based semiconductors important in designing optoelectronic devices such as light emitting diodes (LEDs), laser diodes, ultraviolet (UV) photodetectors and solar cells.…”

Section: Introductionmentioning

confidence: 99%

XRD vs Raman for InGaN/GaN Structures

et al. 2020

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In this study, InGaN/GaN structures are grown by using Metal Organic Chemical Vapor Deposition (MOCVD) technique. Some structural, optical and morphological properties of InGaN/GaN structures are investigated in detail. For structural analysis, X-ray diffraction (XRD), for optical, Raman and morphological, Atomic Force Microscopy (AFM) measurement techniques are used. In XRD analysis both samples presented hexagonal crystal structure. XRD peaks for these two samples showed small differences dependent on growth conditions. Strain and stress values are determined from XRD and they are compared with Raman results. In Raman analysis, five different chemicals are determined in both samples. Raman analysis results are in good accordance with XRD, growth conditions and AFM images. In AFM images, there can be seen hills and holes and they are partly homogeneous. There are also some white regions in AFM images. According to Raman peak center data, these white regions are detected as white rust.

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“…Each energy bandgap (0.7-6.2 eV) between III-Nitride semiconductors forms a large series of triple alloys [2,8,15,22]. With this feature, optoelectronic devices such as light emitting diodes (LEDs), laser diodes and ultraviolet (visible rays-UV) photodetectors are made [12,21,29]. III-Nitride systems (InN, GaN, and AlN) are known as wide bandgap semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Investigation of GaN/InGaN thin film growth on ITO substrate by thermionic vacuum arc (TVA)

Erdoğan

Kundakçı

2018

SN Appl. Sci.

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Group-III nitride semiconductors covering infrared, visible and ultraviolet spectral range have direct bandgaps changing from 0.7 eV (InN) to 3.4 eV (GaN). With this feature, optoelectronic devices such as light emitting diodes, laser diodes and ultraviolet (visible rays-UV) photodetectors are made. It is possible to grow high-quality InGaN epitaxial layers by modern crystal growth techniques such as molecular beam epitaxy, radio frequency sputtering method and metal organic chemical vapor deposition. Compared with these methods, the Thermionic Vacuum Arc, which is promising thin film growth technique, is relatively inexpensive and quite effective approach for preparing InGaN thin films. The purpose of this research is to investigate the physical properties of the film. The XRD patterns of the InGaN thin films deposited on the ITO substrate exhibited polycrystal structure. The larger crystallite size and smaller FWHM indicate better crystallization. Microstrain values also exhibit good crystallite films respect to the low dislocation density. This film has a potential for photovoltaic devices based on the absorbance graph. It was observed that the compound is homogeneously dispersed on the surface and that there is a nanoporous structure.

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Characterization of InGaN-based photovoltaic devices by varying the indium contents

Cited by 17 publications

References 15 publications

Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy

Structural, optical and electronic properties of homoepitaxial GaN nanowalls grown on GaN template by laser molecular beam epitaxy

XRD vs Raman for InGaN/GaN Structures

Investigation of GaN/InGaN thin film growth on ITO substrate by thermionic vacuum arc (TVA)

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