Characterization of Intermetallic Growth for Gold Bonding and Copper Bonding on Aluminum Metallization in Power Transistors

Seng, Yeoh Lai

doi:10.1109/eptc.2007.4469709

Cited by 19 publications

(3 citation statements)

References 3 publications

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“…R DS(ON) of a MOSFET increases due to the degradation at metallization and at the contact area of bonding wire metallization [13]. The authors in [14] also concluded that R DS(ON) increases due to thermal aging, and intermetallic growth and Kirkendall voids formation at the bond-pad interface at higher temperature were studied in this paper. Fig.…”

Section: Origin Of Degradation In Power Semiconductor Devicesmentioning

confidence: 84%

“…These types of failures are bond failures and die solder layer failure. Bond failure is mainly caused by any crack growth at the bond wire/chip interface due to the difference of CTEs of Si and Al [12]. R DS(ON) of a MOSFET increases due to the degradation at metallization and at the contact area of bonding wire metallization [13].…”

Section: Origin Of Degradation In Power Semiconductor Devicesmentioning

confidence: 99%

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Quantifying Device Degradation in Live Power Converters Using SSTDR Assisted Impedance Matrix

Nasrin

Khan

Alam

2014

IEEE Trans. Power Electron.

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A noninterfering measurement technique designed around spread spectrum time domain reflectometry (SSTDR) has been proposed in this paper to identify the level of aging associated with power semiconductor switches inside a live converter circuit. Power MOSFETs are one of the most age-sensitive components in power converter circuits, and this paper demonstrates how SSTDR can be used to determine the characteristic degradation of the switching MOSFETs used in various power converters. An SSTDR technique was applied to determine the aging in power MOSFETs, while they remained energized in live circuits. In addition, SSTDR was applied to various test nodes of an H-bridge ac-ac converter, and multiple impedance matrices were created based on the measured reflections. An error minimization technique has been developed to locate and determine the origin and amount of aging in this circuit, and this technique provides key information about the level of aging associated to the components of interest. By conducting component level failure analysis, the overall reliability of an H-bridge ac-ac converter has been derived and incorporated in this paper.Index Terms-Aging, converter, degradation, failure rate, matrix, mean time to failure (MTTF), reflectometry, reliability, spread spectrum time domain reflectometry (SSTDR).

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Section: Origin Of Degradation In Power Semiconductor Devicesmentioning

confidence: 84%

Section: Origin Of Degradation In Power Semiconductor Devicesmentioning

confidence: 99%

Quantifying Device Degradation in Live Power Converters Using SSTDR Assisted Impedance Matrix

Nasrin

Khan

Alam

2014

IEEE Trans. Power Electron.

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“…And the wire frame and the electrical connections are often completed by Au-Al wire bonding. Yeoh Lai Seng,Yian-Liang Kuo, Wang Quan [7,8,9] summarized the causes of failure of Au-Al wire bonding. The high temperature made the interface of the Au-Al bonding produce gold aluminum compound and come out voids and crack called Kirkendall holes.…”

Section: Introductionmentioning

confidence: 99%

Failure Analysis of Au-Al Wire Bonding to MOSFETs

Huang¹,

Cui

Gao³

et al. 2015

Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015

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Abstract. The gold and aluminum (Au-Al) wire bonding is used to realize interconnection for semiconductor devices. But, sometimes, the failure of Au-Al bond wire exists. In this paper, the failure influence factors of Au-Al bonding to Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) were discussed. Then the wire bond failure analysis of MOSFETs were researched. And bond strength analysis, microscopic examination, scanning electron microscopy (SEM) examination and energy dispersive spectrometer (EDS) analysis, which belongs to the details of all the tests, were completed combined with an application example of MOSFETs. The results demonstrated that the high temperature and the stain in the device lead to the failure of MOSFETs. The temperature is too high to make voids named Kirkendall holes on the interface of Au-Al bonding. And the pollution influenced the materials to cause the bond wire off the substrate. It was suggested that the key parameter, that it to say, the temperature and the pollution like carbon oxygen compound should be strictly controlled to improve the reliability of MOSFETs, especially in the high temperature storage and working conditions.

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Room temperature wedge–wedge ultrasonic bonding using aluminum coated copper wire

Dohle¹,

Petzold²,

Klengel³

et al. 2011

Microelectronics Reliability

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Characterization of Intermetallic Growth for Gold Bonding and Copper Bonding on Aluminum Metallization in Power Transistors

Cited by 19 publications

References 3 publications

Quantifying Device Degradation in Live Power Converters Using SSTDR Assisted Impedance Matrix

Quantifying Device Degradation in Live Power Converters Using SSTDR Assisted Impedance Matrix

Failure Analysis of Au-Al Wire Bonding to MOSFETs

Room temperature wedge–wedge ultrasonic bonding using aluminum coated copper wire

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