Characterization of InxGa1−xAs single quantum wells, buried in GaAs[001], by grazing incidence diffraction

Rose, D.; Pietsch, U.; Zeimer, U.

doi:10.1063/1.363924

Cited by 11 publications

(15 citation statements)

References 21 publications

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“…Thus the recorded a f -spectra can be described by incoherent superposition of the transmission function enhanced scattering (Yoneda maximum) and the contribution from CTRs [3]. The angular positions of the peaks follows those given in equ.…”

Section: Numerical Simulationmentioning

confidence: 76%

“…For all angles q a sharp peak is found at a f a c, sapphire 0. 3 . For smaller a f the Bragg intensity is almost vanishing for reasons discussed above.…”

Section: Gid Experiments On Silicon On Sapphirementioning

confidence: 99%

“…Besides the intrinsic Darwin width the measured width along Q k is determined by the experimental resolution (see discussion above). For reasons of simplicity this is approximated by a Gaussian distribution containing the resolution parameter q [3,6,7]:…”

Section: Numerical Simulationmentioning

confidence: 99%

“…If the layers are stacked as it is the case in many semiconductor devices, growth and relaxation behaviour of the layers can be studied as a function of depth below the surface [2]. As shown recently the interface structure of thin buried layers can be determined in monolayer accuracy [3]. Various physical properties of thin surface layers have been investigated by GID ranging from surface induced melting to ordering phenomena in phase transitions [4].…”

Section: Introductionmentioning

confidence: 99%

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High-Resolution Lattice Parameter Measurement by X-Ray Grazing Incidence Diffraction

Metzger¹,

Pietsch

Gartstein

1999

phys. stat. sol. (a)

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Surface sensitive grazing incidence diffraction (GID) is used to study the interface between silicon and sapphire. A thin crystalline layer of aluminium silicate with a lateral lattice parameter slightly different from sapphire is found and quantified by model calculations. We demonstrate that in GID, very thin interface layers can be investigated for which the sensitivity for measuring small Bragg angle differences, Δθ, is enhanced by a factor of about 25 by the projection of Δθ into the plane perpendicular to the sample surface. The accuracy of the lattice parameter determination is thereby improved by at least one order of magnitude.

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Section: Numerical Simulationmentioning

confidence: 76%

“…For all angles q a sharp peak is found at a f a c, sapphire 0. 3 . For smaller a f the Bragg intensity is almost vanishing for reasons discussed above.…”

Section: Gid Experiments On Silicon On Sapphirementioning

confidence: 99%

Section: Numerical Simulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

High-Resolution Lattice Parameter Measurement by X-Ray Grazing Incidence Diffraction

Metzger¹,

Pietsch

Gartstein

1999

phys. stat. sol. (a)

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“…With either total reflection ellipsoidal mirrors 8 or polycapillary devices 9,10 , beams of typically 0.25 mm diameter and 2-3 mrad divergence can be delivered at the sample from a microfocus x-ray generator closely coupled to the x-ray optic. Such beam size and diameter are well matched to the optimal requirements for GIIXD 11 . In this paper we report the successful application of a laboratory-based microfocus x-ray source with focusing optics to the direct measurement of in-plane mosaic in epitaxial Fe/Au multilayers and GaN based epilayers.…”

Section: Introductionmentioning

confidence: 80%

Grazing Incidence In-plane Diffraction Measurement of In-plane Mosaic with Microfocus X-ray Tubes

Goorsky¹,

Tanner²

2002

Zeitschrift für experimentelle und technische Kristallographie

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The in‐plane mosaic structure of Au/Fe and GaN‐based epitaxial layers has been determined directly by laboratory‐based grazing incidence in‐plane x‐ray diffraction in which Bragg reflections normal to the plane of the wafer are probed. High intensity and acceptable signal‐to‐noise can be obtained with no modifications to commercially available equipment. Excellent agreement is obtained between measurements of the same Au/Fe multilayer samples at the European Synchrotron Radiation Facility in Grenoble and with the laboratory system employing a focused x‐ray beam from a microfocus generator. The technique is particularly important for the GaN‐based systems as it uniquely provides a measure of the so‐called twist mosaic independent of the out‐of plane (tilt) mosaic.

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Dynamical Diffraction

Shen¹

2002

Characterization of Materials

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Diffraction‐related techniques using x rays, electrons, or neutrons are widely used in materials science to provide basic structural information on crystalline materials. To describe a diffraction phenomenon, one has the choice of two theories: kinematic or dynamical. Kinematic theory assumes that each x‐ray photon, electron, or neutron scatters only once before it is detected. This assumption is valid in most cases for x rays and neutrons since their interactions with materials are relatively weak. This single‐scattering mechanism is also called the first‐order Born approximation or simply the Born approximation. The kinematic diffraction theory can be applied to a vast majority of materials studies and is the most commonly used theory to describe x‐ray or neutron diffraction from crystals that are imperfect. There are, however, practical situations where the higher‐order scattering or multiple‐scattering terms in the Born series become important and cannot be neglected. This is the case, for example, with electron diffraction from crystals, where an electron beam interacts strongly with electrons in a crystal. Multiple scattering can also be important in certain application areas of x‐ray and neutron scattering, as described below. In all these cases, the simplified kinematic theory is not sufficient to evaluate the diffraction processes and the more rigorous dynamical theory is needed where multiple scattering is taken into account. Dynamical diffraction is the predominant phenomenon in almost all electron diffraction applications, such as low‐energy electron diffraction and reflection high‐energy electron diffraction. For x rays and neutrons, areas of materials research that involve dynamical diffraction may include the situations discussed.

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Characterization of InxGa1−xAs single quantum wells, buried in GaAs[001], by grazing incidence diffraction

Cited by 11 publications

References 21 publications

High-Resolution Lattice Parameter Measurement by X-Ray Grazing Incidence Diffraction

High-Resolution Lattice Parameter Measurement by X-Ray Grazing Incidence Diffraction

Grazing Incidence In-plane Diffraction Measurement of In-plane Mosaic with Microfocus X-ray Tubes

Dynamical Diffraction

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