2022
DOI: 10.1149/10904.0335ecst
|View full text |Cite
|
Sign up to set email alerts
|

Characterization of Light Emission Properties of Impurity Doped Ge/Si Core–Shell Quantum Dots

Abstract: We have fabricated valency-controlled Si-QDs with Ge-core with an areal density as high as ~1011 cm-2 on ultrathin SiO2 and studied the effect of phosphorus- and boron-doping on Ge-core from their PL properties. During the Ge deposition, delta doping of phosphorus or boron atoms in QDs was carried out by pulse injection using 1% PH3 or B2H6 diluted with He, respectively. No changes in dot size and density with either P- or B-doping were confirmed by AFM topographic images. Under photoexcitation of undoped QDs … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 18 publications
(19 reference statements)
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?