Characterization of low-k dielectric trench surface cleaning after a fluorocarbon etch

Tan, Y.S.; Chooi, Simon Y.M.; Sin, Chian-Yuh; Ee, Ping-Yu; Srinivasan, M.P.; Pehkonen, Simo O.

doi:10.1016/j.tsf.2004.05.053

Cited by 21 publications

(9 citation statements)

References 5 publications

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“…† In general, a peak at 284.5 eV corresponds to a carbonaceous contamination or weakly bound carbon which appears consistently in XPS spectra. 25 On the other hand, the peak near $282 eV can be assigned to a Si-C bonding formed by substitutional C atoms (according to reports, it appears mainly in the 282.4-283 eV region). 26,27 To differentiate the species of C atoms (Si-C bonding) from external contamination, we performed Ne ion sputtering on the wire at 2 kV.…”

Section: Resultsmentioning

confidence: 98%

“…After the sputtering process, these Si-O-C states completely disappeared. 25 Thus, in summary, Si 1Àx C x NWs can be grown by the VLS method when CH 3 SiH 3 gas is injected into the Au catalyst along with SiH 4 gas, thereby overcoming the extremely low C solubility in Au and resulting in the interstitial incorporation of a high number of C atoms.…”

Section: Resultsmentioning

confidence: 99%

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Induction of the surface plasmon resonance from C-incorporated Au catalyst in Si1−xCx nanowires

et al. 2012

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Si 1Àx C x nanowires (NWs) were synthesized by varying the ratio of SiH 4 and CH 3 SiH 3 gases using a vapor-liquid-solid (VLS) procedure using Au as a catalyst. The growth rate of the Si 1Àx C x NWs and the change in the wire shape from straight to helical near the Au tip were found to be closely related to the ratio of the CH 3 SiH 3 content. The large concentration of C in the Si 1Àx C x NWs was proportional to the CH 3 SiH 3 content, overcoming the extremely low solubility of C in Si, resulting in an interstitial incorporation of C atoms in the wire. This incorporation can be attributed to the cleavage of Si-C bonds in the CH 3 SiH 3 compound through the Au catalyst (an Au-Si liquid-state cluster of about 70-100 nm) during wire growth by the VLS method. Simultaneously supplying CH 3 SiH 3 and SiH 4 gases enhanced the diffusion of Au atoms from the tip to the sidewall of the wire, while also deforming the shape of the Au tip. When the CH 3 SiH 3 gas was increased to 1.5 sccm, the number of Au nanoparticles (2-3 nm in size) at the lateral surface induced a surface plasmon resonance (SPR) and improved the optical conductivity (s) of the Si 1Àx C x NWs. For 2 sccm of CH 3 SiH 3 , a remarkable increase in the number of C atoms incorporated in the Au nanoparticles along the sidewall red shifted the SPR peak, suggesting that the SPR can be modulated by the Au-C interactions in the nanoparticles.

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Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Induction of the surface plasmon resonance from C-incorporated Au catalyst in Si1−xCx nanowires

et al. 2012

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“…식각잔류물은 저유전 층간절연막을 CF 4 , CHF 3 및 C 4 F 8 과 산소 또는 아르곤과 혼합된 가스에 의해 via와 trench를 형성하는 과정에 발생하게 된다 [4]. 이러한 잔류물들은 플라즈마 식각에 의해 형성된 damascene 구조의 유전체의 측별과 상부, 그리고 구리 표면에 남게 된다 [5].…”

Section: 서 론unclassified

Characteristics of Semi-Aqueous Cleaning Solution with Carboxylic Acid for the Removal of Copper Oxides Residues

Ko¹,

Lee²

2016

Korean Chemical Engineering Research

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요 약Damascene 구조를 갖는 반도체소자의 구리금속배선 식각공정에서 배선재료에 의해서 발생되는 구리 식각잔류물을 제거하기 위해 oxalic acid (OA), lactic acid (LA) 및 citric acid (CA)의 카르복시산 함유된 반수계 혼합세정액을 제조 하고 특성을 분석하였다. 카르복시산은 pH에 따라 카르복실기와 구리이온들과의 다양한 복합체를 형성하며 세정특성 의 변화를 준다. 카르복시산들이 함유된 각각의 세정액의 세정특성평가결과 10 wt% CA를 함유한 반수계 세정액의 식 각잔류물 세정특성은 pH 2에서 7까지의 영역에서 가장 낮은 구리 식각률을 보였으며 pH 2에서 4까지 구리에 대한 구 리산화물의 가장 높은 식각 선택도를 나타내었으나 pH 5에서 7 범위에서는 10 wt% LA가 함유된 세정액이 더 높은 선택도를 보였다. 따라서 표면세정효과는 pH에 따라 변화하며 적절한 카르복시산을 사용함이 요구된다. CA가 함유된 세정액의 경우에 CA 농도와 구리에 대한 구리산화물의 식각 선택도의 증가특성을 보이며 CA가 5 wt%이상 함유된 경우에는 세정 후 구리배선의 표면이 88 %이상의 금속구리로 분석되어 구리산화물로 구성된 식각 잔류물의 제거에 효과적임을 알 수 있었다.Abstract − In this study, semi-aqueous solutions containing carboxylic acids such as oxalic acid (OA), lactic acid (LA) and citric acid (CA) were formulated for the removal of copper etching residues produced at the interconnection process, and their characteristics were analyzed. Carboxylic acids in the solutions were apt to form various copper complexes according to the value of pH. Semi-aqueous solution containing 10 wt% CA showed the lowest etching rate of copper in the range from pH2 to pH7 and the highest selectivity in the range of pH 2 to pH 4. However, the cleaning solution containing 10 wt% LA revealed the superior selectivity at the range from pH 5 to pH 7. Appropriate selection of carboxylic acid should be required to improve the performance of cleaning solution. In the case of CA, the etching selectivity of copper oxide complex to copper was increased with the concentration of CA in the solution, when the solutions contain over 5 wt% CA, the copper interconnection layer has a metallic copper surface more than 88% in the area. The result shows that CA contained semi-aqueous solution has a relatively good cleaning ability.

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“…Similar trends are noted for the C 1s line of sample #2, as evidenced by the transformation of the central peak associated with -CH bond after ion etching (figure 3) into double peaks where the low energy peak at 282.4 eV is associated with the C-Si bond. The other C 1s peak at about 286.3 eV is a typical characteristic of oxidized carbon species, in particular carbonyl species of the types CO [13], or could also be associated with the Si-O-C bond [14].…”

Section: X-ray Electron Spectroscopy (Xps)mentioning

confidence: 99%

Doping of silicon by carbon during laser ablation process

Račiukaitis¹,

Brikas²,

Kazlauskienė

et al. 2007

J. Phys.: Conf. Ser.

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Abstract. Effect of laser ablation on properties of remaining material was investigated in silicon. It was established that laser cutting of wafers in air induced doping of silicon by carbon. The effect was found to be more distinct by the use of higher laser power or UV radiation. Carbon ions created bonds with silicon in the depth of silicon. Formation of the silicon carbide type bonds was confirmed by SIMS, XPS and AES measurements. Modeling of the carbon diffusion was performed to clarify its depth profile in silicon. Photo-chemical reactions of such type changed the structure of material and could be a reason for the reduced quality of machining. A controlled atmosphere was applied to prevent carbonization of silicon during laser cutting.

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Characterization of low-k dielectric trench surface cleaning after a fluorocarbon etch

Cited by 21 publications

References 5 publications

Induction of the surface plasmon resonance from C-incorporated Au catalyst in Si1−xCx nanowires

Induction of the surface plasmon resonance from C-incorporated Au catalyst in Si1−xCx nanowires

Characteristics of Semi-Aqueous Cleaning Solution with Carboxylic Acid for the Removal of Copper Oxides Residues

Doping of silicon by carbon during laser ablation process

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