2005
DOI: 10.1016/j.surfcoat.2004.10.094
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Characterization of masking layers for deep wet etching of glass in an improved HF/HCl solution

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Cited by 168 publications
(94 citation statements)
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“…To remove any insoluble products, HCl (Ref. 46) or H 3 PO 4 (Ref. 47) can be added to the etching solution.…”
Section: Wet Etchingmentioning
confidence: 99%
“…To remove any insoluble products, HCl (Ref. 46) or H 3 PO 4 (Ref. 47) can be added to the etching solution.…”
Section: Wet Etchingmentioning
confidence: 99%
“…To achieve a better Al stripping during wet etching after the RIE, it is advised to do an oxidization step using O 2 plasma, which creates Al 2 O 3 . However as the use of O 2 plasma without adding SF 6 creates a rough surface for glassy carbon; this step has been put aside. …”
Section: Glassy Carbon Plasma Etching Using An Aluminium or A Titaniumentioning
confidence: 99%
“…Kuhnke et al have made a comparison between direct laser micromachining and reactive ion etching (RIE) [28], and Youn et al and Takahashi et al have investigated focused ion beam, nano/femtosecond-pulsed laser, excimer laser and dicing techniques [24,[30][31][32]. Dry etching of glassy carbon which results in a smooth surface quality has been highlighted by combining SF 6 /O 2 during the RIE process [33,34].…”
mentioning
confidence: 99%
“…Wet etching processes using hydrofluoric acid or potassium hydroxide solutions are conventionally available in the fabrication of microchannels. [12][13][14][15] However, wet etching processes often generate undesired over-etching or etching defects arising from the difficulty in controlling the solution composition and reaction times, and is also tainted by the formation of non-rectangular shapes due to isotropic etching and low aspect ratios (usually lower than 1.0). Moreover, such strong acidic solutions are toxic and not environmentally friendly.…”
Section: Introductionmentioning
confidence: 99%