Characterization of MBE Grown GaAs With Isoelectronic Doping of Indium or Antimony

Abstract

The effects of In and Sb on the concentration of electron traps in MBE grown n-type GaAs are investigated. Two traps, labeled M3 and M6, dominate the DLTS spectrum. It is observed that at growth temperatures of 500 and 5500 C their concentrations can be reduced by up to two orders of magnitude by the introduction of a few atomic percent of either In or Sb. The percent In or Sb producing the lowest trap concentrations decreases with increasing substrate temperature and thus for a substrate growth temperature of 600' C no additional improvement in the deep trap concentration is observed.