Characterization of metal contacts on and surfaces of cadmium zinc telluride

Bürger, A.; Chen, H; Chattopadhyay, K.; Shi, D. T.; Morgan, S. H.; Collins, W. E.; James, R. B.

doi:10.1016/s0168-9002(98)01574-5

Cited by 35 publications

(15 citation statements)

References 24 publications

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“…Many authors described the technology of applying suitable electrical contacts to make detectors from those crystals, and the difficulties encountered in developing them [2,3,[5][6][7][8][9][10][11]). …”

Section: Introductionmentioning

confidence: 99%

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Contacts for High-Resistivity (Cd,Mn)Te Crystals

Witkowska-Baran

Mycielski

Kochanowska

et al. 2011

IEEE Trans. Nucl. Sci.

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Abstract-Semi-insulating (Cd,Mn)Te crystals offer a material that may compete well with the commonly used (Cd,Zn)Te crystals for manufacturing large-area X-and gamma-ray detectors [1]. The Bridgman growth method yields good quality, high-resistivity (10 9 -10 10 Ω·cm) crystals of (Cd,Mn)Te:V. Doping the as-grown crystals with the compensating agent vanadium (≈ 10 16 cm -3 ) ensures their high resistivity; thereafter, annealing them in cadmium vapors reduces the number of cadmium vacancies. Applying the crystals as detectors necessitates having satisfactory electrical contacts. Accordingly, we explored various techniques of ensuring good electrical contacts to these semi-insulating (Cd,Mn)Te crystals, assessing metallic layers, monocrystalline semiconductor layers, and amorphous (or nanocrystalline) semiconductor layers. We found that ZnTe heavily doped (≈ 10 18 cm -3 ) with Sb, and CdTe heavily doped ( ≈ 10 17 cm -3 ) with In, proved satisfactory semiconductor contact layers. They subsequently enabled us to establish good contacts (with only narrow tunneling barriers) to the Au layer that usually constitutes the most external contact layer. We outline our technology of applying electrical contacts to semiinsulating (Cd,Mn)Te, and describe some important properties.

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Section: Introductionmentioning

confidence: 99%

“…In many cases, these factors have profound technological implications on the detector's response. Thus, several contact-related problems must be solved in developing high-efficiency, high-sensitivity (Cd,Zn)Te and CdTe detectors [3].…”

Section: Introductionmentioning

confidence: 99%

Contacts for High-Resistivity (Cd,Mn)Te Crystals

Witkowska-Baran

Mycielski

Kochanowska

et al. 2011

IEEE Trans. Nucl. Sci.

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“…The technology of electrical contacts required to make detectors from those crystals and the difficulties encountered in the development of this technology are described in many papers e.g. [1][2][3][4][5][6][7][8][9]. The metal-semiconductor interface as an electrical contact to the semiconductor crystal used as a radiation detector is an important area of study.…”

Section: Introductionmentioning

confidence: 99%

“…Electrical contacts determine the performance of a detector to a large degree. In the case of the development of high-sensitivity (Cd, Zn)Te and CdTe-based detectors, several contact-related problems remain to be solved [2,10,11]. Especially, the contacts to the high-resistivity CdTe and (Cd, Zn)Te crystals still present a permanent problem, and the studies are under way [10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Amorphous contact layers on (Cd,Mn)Te crystals

Witkowska-Baran

Mycielski

Kochanowska

et al. 2011

Journal of Crystal Growth

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“…Numerous studies on the surface processing of CZT radiation detectors [1][2][3][4][5] have shown that surface properties control many aspects of the devicesÕ operation and performance. For example, the application of maximum bias voltage is often limited by the leakage current.…”

Section: Introductionmentioning

confidence: 99%

Effects of Surface Processing on the Response of CZT Gamma Detectors: Studies with a Collimated Synchrotron X-Ray Beam

Hossain

Bolotnikov

Camarda

et al. 2008

Journal of Elec Materi

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Using a microscale X-ray mapping technique incorporating a synchrotron beam, we are able to reveal the fine details of the surface properties in cadmium zinc telluride (CZT) semiconductor detectors. A detector, with various degrees of surface roughness, was irradiated by a high-spatial-resolution X-ray beam. The detectorÕs response was analyzed and displayed as a twodimensional (2-D) map, and the charge collection was obtained from the peak positions in the spectra versus the beamÕs location, which reflects the local material properties. We noted the correlation between the 2-D image and the spectral response of the charge collection at different locations on the surface area, which indicates that a rough surface tends to contain trapping centers, thereby enhancing leakage current and distorting the signal. We also discuss our observations on the transition effect at the boundary area of a rough and a smooth surface under identical conditions.

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Characterization of metal contacts on and surfaces of cadmium zinc telluride

Cited by 35 publications

References 24 publications

Contacts for High-Resistivity (Cd,Mn)Te Crystals

Contacts for High-Resistivity (Cd,Mn)Te Crystals

Amorphous contact layers on (Cd,Mn)Te crystals

Effects of Surface Processing on the Response of CZT Gamma Detectors: Studies with a Collimated Synchrotron X-Ray Beam

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